STB45NF3LLT4 STMicroelectronics, STB45NF3LLT4 Datasheet - Page 4

• Manufacturer Part Number: STB45NF3LLT4
• Description: N-CHANNEL 30V 0.014 Ohm 45A TO-220/TO-220FP/D2PAK STRIPFET II POWER MOSFET
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 5.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
t
C
I
I
C
DS(on)
C
GS(th)
Q
Q
d(on)
d(off)
DSS
GSS
fs
Q
oss
t
t
rss
iss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
Parameter
Parameter
DS
Parameter
= 0)
GS
= 0)
V
V
V
V
V
I
V
V
V
V
V
V
D
GS
GS
DS
DS
GS
DS
GS
GS
DS
DS
DD
= 250 µA, V
V
R
(see Figure 15)
V
R
(see Figure 15)
=Max rating, T
= 15V
= 25V, f = 1 MHz,
= Max rating
= ±16V
= V
= 10V, I
= 4.5V, I
= 0
= 24V, I
= 5V
DD
DD
G
G
Test conditions
Test conditions
= 4.7Ω V
= 4.7Ω, V
Test conditions
GS
= 15V, I
= 15V, I
,
, I
I
D
D
D
D
D
=22.5A
= 22.5A
= 45A,
GS
= 250µA
= 22.5A
GS
D
D
GS
= 22.5A
= 22.5A,
= 0
C
= 4.5V
=125°C
= 4.5V
STP45NF3LL - STB45NF3LL
Min.
Min.
Min.
30
1
0.014
0.016
Typ.
12.5
Typ.
800
250
Typ.
4.6
5.2
100
20
60
17
20
21
0.018
0.020
Max.
Max.
±100
Max.
17
10
1
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
µA
µA
nA
ns
ns
ns
ns
S
V
V
Ω
Ω