STB21NM60N- STMicroelectronics, STB21NM60N- Datasheet

STB21NM60N-

Manufacturer Part Number

STB21NM60N-

Description

N-channel 600 V - 0.17 Ohm - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh Power MOSFET

Manufacturer

STMicroelectronics

Datasheet

1.STB21NM60N-.pdf (18 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

STB21NM60N-1

Manufacturer:

Quantity:

20 000

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Features

1. Limited by maximum temperature allowed

■

Application

■

Description

This series of devices implements the second

generation of MDmesh™ technology. This

revolutionary Power MOSFET associates a new

vertical structure to the company’s strip layout to

yield one of the world’s lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

Table 1.

February 2008

STB21NM60N

STB21NM60N-1

STF21NM60N

STP21NM60N

STW21NM60N

100% avalanche tested

Low input capacitance and gate charge

Low gate input resistance

Switching applications

STB21NM60N-1

STW21NM60N

Type

STB21NM60N

STF21NM60N

STP21NM60N

N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D

Order codes

PAK - TO-247 second generation MDmesh™ Power MOSFET

Device summary

(@Tjmax)

650 V

STP21NM60N-F21NM60N-STW21NM60N

DSS

< 0.22 Ω

max

DS(on)

W21NM60N

B21NM60N

P21NM60N

F21NM60N

Marking

STB21NM60N-STB21NM60N-1

17 A

(1)

Rev 7

Figure 1.

TO-220

TO-220FP

Package

TO-220

TO-247

PAK

Internal schematic diagram

PAK

1 2

TO-220FP

TO-247

Tape and reel

Packaging

Tube

PAK -

PAK

www.st.com

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