BFU660F NXP Semiconductors, BFU660F Datasheet - Page 3

• Manufacturer Part Number: BFU660F
• Description: NPN wideband silicon RF transistor
• Manufacturer: NXP Semiconductors

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NXP Semiconductors
4. Marking
5. Limiting values
6. Thermal characteristics
BFU660F
Product data sheet
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 6.
Type number
BFU660F
Symbol
V
V
V
I
P
T
T
Symbol
R
C
Fig 1.
stg
j
CBO
CEO
EBO
tot
th(j-sp)
T
sp
is the temperature at the solder point of the emitter lead.
Power derating curve
Marking
Limiting values
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
All information provided in this document is subject to legal disclaimers.
(mW)
P
Rev. 1 — 11 January 2011
tot
300
250
200
150
100
50
0
0
Marking
D3*
40
Conditions
open emitter
open base
open collector
T
sp
≤ 90 °C
80
NPN wideband silicon RF transistor
120
T
001aam822
[1]
sp
(°C)
-
-
Min
-
-
-
-
−65
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
160
Conditions
Max
16
5.5
2.5
60
225
+150
150
BFU660F
© NXP B.V. 2011. All rights reserved.
Typ
270
Unit
V
V
V
mA
mW
°C
°C
Unit
K/W
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