NES1823P-45 NEC, NES1823P-45 Datasheet - Page 2

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NES1823P-45

Manufacturer Part Number
NES1823P-45
Description
45 W L / S-BAND PUSH-PULL POWER GaAs MES FET
Manufacturer
NEC
Datasheet
ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, T
RECOMMENDED OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS (T
2
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
Output Power
Drain Current
Power Added Efficiency
Linear Gain
3rd Order Intermodulation Distortion
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Drain to Source Voltage
Gain Compression
Channel Temperature
Set Drain Current
Gate Resistance
Note T
Note R
Notes 1. I
Operation in excess of any one of these parameters may result in permanent damage.
2. P
C
g
= +25 C
is the series resistance between the gate supply and the FET gate.
Parameter
Parameter
Parameter
Dset
in
= 21 dBm
= 2.0 A each drain
Symbol
Symbol
Symbol
Gcomp
G
P
V
R
V
I
P
IM
V
V
I
R
T
DSS
V
L
tot
T
T
Dset
I
GSO
GDO
I
I
g
add
out
D
stg
Note2
DS
D
G
DS
th
ch
ch
Note
p
Note
3
Preliminary Data Sheet P14752EJ1V0DS00
A
V
V
Channel to Case
f = 2.20 GHz, V
P
I
P
V
= +25 C)
Dset
f = 5 MHz,
DS
DS
in
out
DS
= 37.5 dBm, R
= 2.5 V, V
= 2.5 V, I
= 37 dBm (2 tones total)
= 4.0 A Total (RF OFF)
= 12.0 V, RF OFF
65 to +175
Ratings
Test Conditions
Test Conditions
240
165
175
19
24
D
22
GS
7
= 110 mA
DS
= 0 V
g
= 12.0 V,
= 30
,
Note1
Unit
mA
W
V
V
V
A
C
C
A
= +25 C)
MIN.
MIN.
45.5
11
4.0
TYP.
TYP.
24.0
46.5
4.0
0.7
45
12
2.6
7
40
NES1823P-45
MAX.
MAX.
+150
12.0
3.0
6.0
0.9
30
dBm
Unit
Unit
dBc
C/W
dB
dB
%
V
A
A
V
A
C

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