BFQ18A Philips Semiconductors, BFQ18A Datasheet - Page 3

• Manufacturer Part Number: BFQ18A
• Description: NPN 4 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL RESISTANCE
Note
1. T
CHARACTERISTICS
T
Note
1. I
September 1995
SYMBOL
R
h
C
C
C
f
d
SYMBOL
j
T
FE
im
th j-s
= 25 C unless otherwise specified.
c
e
re
NPN 4 GHz wideband transistor
V
V
V
measured at f
c
s
p
q
r
= 80 mA; V
= V
is the temperature at the soldering point of the collector tab.
= V
= V
o
o
o
= 700 mV; f
thermal resistance from junction to
soldering point
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
intermodulation distortion (see Fig.2) note 1
6 dB; f
6 dB; f
CE
(p q-r)
r
q
= 10 V; R
= 805.25 MHz;
= 803.25 MHz;
= 793.25 MHz.
p
PARAMETER
=795.25 MHz;
PARAMETER
L
= 75 ;
I
I
I
I
I
C
E
C
C
C
= 100 mA; V
= i
= i
= 0; V
= 100 mA; V
up to T
e
c
= 0; V
= 0; V
3
CE
s
CONDITIONS
= 10 V; f = 10.7 MHz
= 155 C (note 1)
CB
EB
CONDITIONS
CE
CE
= 0.5 V; f = 1 MHz
= 10 V; f = 1 MHz
= 10 V
= 10 V; f = 500 MHz
THERMAL RESISTANCE
25
MIN.
Product specification
20 K/W
2
11
1.2
4
BFQ18A
TYP.
60
pF
pF
pF
GHz
dB
UNIT