BFQ18A Philips Semiconductors, BFQ18A Datasheet - Page 2

• Manufacturer Part Number: BFQ18A
• Description: NPN 4 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
DESCRIPTION
NPN transistor in a plastic SOT89
envelope intended for application in
thick and thin-film circuits. It is
primarily intended for MATV
purposes.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
September 1995
V
V
I
P
f
C
d
V
V
V
I
P
T
T
SYMBOL
SYMBOL
C
T
C
im
stg
j
CBO
CEO
tot
CBO
CEO
EBO
tot
re
NPN 4 GHz wideband transistor
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
feedback capacitance
intermodulation distortion
PARAMETER
PARAMETER
PINNING
PIN
1
2
3
emitter
collector
base
Code: FF
open emitter
open base
open collector
up to T
DESCRIPTION
open emitter
open base
up to T
I
T
I
I
V
f
C
C
C
(p q-r)
j
o
2
= 25 C
= 100 mA; V
= 0; V
= 80 mA; V
= 700 mV; measured at
s
= 793.25 MHz
= 155 C (note 1)
s
CE
= 155 C (note 1)
CONDITIONS
= 10 V; f = 10.7 MHz
CONDITIONS
CE
CE
= 10 V; R
= 10 V; f = 500 MHz;
page
L
= 75 ;
Bottom view
Fig.1 SOT89.
Product specification
1
4
1.2
TYP. MAX. UNIT
MIN.
65
2
BFQ18A
25
18
150
1
25
18
2
150
1
150
175
MBK514
MAX. UNIT
60
3
V
V
mA
W
GHz
pF
dB
V
V
V
mA
W
C
C