BFG403W Philips Semiconductors, BFG403W Datasheet - Page 6

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BFG403W

Manufacturer Part Number
BFG403W
Description
NPN 17 GHz wideband transistor
Manufacturer
Philips Semiconductors
Datasheet

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BFG403W
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Philips Semiconductors
1998 Mar 11
handbook, halfpage
handbook, full pagewidth
NPN 17 GHz wideband transistor
V
Fig.7
I
C
MSG
CE
(dB)
= 3 mA; V
= 2 V; f = 2 GHz.
30
20
10
0
0
Maximum stable gain as a function of
collector current; typical values.
CE
= 2 V; Z
o
2
= 50
Fig.9 Common emitter input reflection coefficient (S
180
4
0
135
135
0.2
0.2
I C (mA)
0.2
MGG710
0.5
0.5
6
0.5
90
90
6
1
1
1
handbook, halfpage
3 GHz
I
Fig.8
C
gain
(dB)
= 3 mA; V
2
40
30
20
10
0
10
Gain as a function of frequency;
typical values.
2
2
CE
= 2 V.
5
11
40 MHz
); typical values.
45
45
5
5
10
MGG713
2
MSG
S 21
0
1.0
0.8
0.6
0.4
0.2
0
1.0
10
3
Product specification
f (MHz)
BFG403W
MGG711
10
4

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