BFG403W Philips Semiconductors, BFG403W Datasheet - Page 3

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BFG403W

Manufacturer Part Number
BFG403W
Description
NPN 17 GHz wideband transistor
Manufacturer
Philips Semiconductors
Datasheet

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Manufacturer
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BFG403W
Manufacturer:
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Quantity:
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BFG403W
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Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
THERMAL CHARACTERISTICS
1998 Mar 11
handbook, halfpage
V
V
V
I
P
T
T
R
SYMBOL
SYMBOL
C
stg
j
CBO
CEO
EBO
tot
th j-s
NPN 17 GHz wideband transistor
(mW)
s
P tot
is the temperature at the soldering point of the emitter pins.
20
10
0
0
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to soldering point
Fig.2 Power derating curve.
40
PARAMETER
80
120
T s ( C)
PARAMETER
MGD957
160
open emitter
open base
open collector
T
s
140 C; note 1; see Fig.2
3
CONDITIONS
65
MIN.
VALUE
820
10
4.5
1
3.6
16
+150
150
Product specification
MAX.
BFG403W
UNIT
K/W
V
V
V
mA
mW
C
C
UNIT

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