BFG10 Philips Semiconductors, BFG10 Datasheet - Page 5

• Manufacturer Part Number: BFG10
• Description: NPN 2 GHz RF power transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
SPICE parameters for the BFG10 crystal
Note
1. These parameters have not been extracted,
1995 Aug 31
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
SEQUENCE No.
NPN 2 GHz RF power transistor
(1)
(1)
(1)
(1)
(1)
(1)
(1)
the default values are shown.
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
PARAMETER
2.714
102.8
0.998
28.12
6.009
403.2
2.937
31.01
0.999
2.889
0.284
1.487
1.100
3.500
1.000
3.500
0.217
0.196
0.000
1.110
3.000
5.125
0.600
0.367
12.07
99.40
7.220
3.950
0.000
2.327
0.668
0.398
0.160
0.000
0.000
750.0
0.000
0.652
VALUE
fA
V
A
pA
V
A
fA
eV
pF
V
ps
V
A
deg
pF
V
ns
F
mV
A
UNIT
5
List of components (see Fig.6)
C
C
C
L1
L2
L3
L
L
handbook, halfpage
B
E
be
cb
ce
QL
f
c
= scaling frequency = 100 MHz.
DESIGNATION
B
B
= 50; QL
Fig.6 Package equivalent circuit SOT143.
C be
L1
E
= 50; QL
L B
B,E
(f) = QL
B'
84
17
191
0.12
0.21
0.06
0.95
0.40
C cb
E'
E
BFG10; BFG10/X
B,E
VALUE
L3
L E
C'
(f/f
c
);
Product specification
fF
fF
fF
nH
nH
nH
nH
nH
C
MBC964
L2
ce
UNIT
C