BFG10 Philips Semiconductors, BFG10 Datasheet - Page 2

• Manufacturer Part Number: BFG10
• Description: NPN 2 GHz RF power transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in plastic, 4-pin
dual-emitter SOT143 package.
QUICK REFERENCE DATA
RF performance at T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
1995 Aug 31
Pulsed, class-AB, duty cycle: < 1 : 8
V
V
V
I
I
P
T
T
SYMBOL
C
C(AV)
stg
j
High power gain
High efficiency
Small size discrete power amplifier
1.9 GHz operating area
Gold metallization ensures
excellent reliability.
Common emitter class-AB
operation in hand-held radio
equipment at 1.9 GHz.
CBO
CEO
EBO
tot
NPN 2 GHz RF power transistor
s
is the temperature at the soldering point of the collector pin.
MODE OF OPERATION
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
amb
PARAMETER
= 25 C in a common-emitter test circuit (see Fig.7).
PINNING
MARKING
BFG10 (see Fig.1)
BFG10/X (see Fig.1)
BFG10
BFG10/X
TYPE NUMBER
PIN
open emitter
open base
open collector
up to T
1
2
3
4
1
2
3
4
(GHz)
1.9
f
s
= 60 C; see Fig.2; note 1
collector
base
emitter
emitter
collector
emitter
base
emitter
CONDITIONS
DESCRIPTION
2
V
3.6
(V)
CODE
CE
N70
N71
(mW)
200
P
L
handbook, 2 columns
65
MIN.
BFG10; BFG10/X
Top view
1
4
Fig.1 SOT143.
(dB)
G
Product specification
20
8
2.5
250
250
400
+150
175
5
p
MAX.
MSB014
3
2
V
V
V
mA
mA
mW
C
C
(%)
UNIT
50
c