2SA921 Panasonic Semiconductor, 2SA921 Datasheet
2SA921
Manufacturer Part Number
2SA921
Description
Silicon NPN epitaxial planer type
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SA921.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SA921
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Transistor
2SA921
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SC1980
*
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
FE
Features
High collector to emitter voltage V
Low noise voltage NV.
Absolute Maximum Ratings
Electrical Characteristics
Rank
Rank classification
h
FE
Parameter
Parameter
180 ~ 360
R
260 ~ 520
Symbol
V
V
V
I
I
P
T
T
CP
C
S
C
j
stg
CBO
CEO
EBO
I
I
V
V
V
h
V
f
NV
CBO
CEO
T
FE
(Ta=25˚C)
Symbol
CBO
CEO
EBO
CE(sat)
*
CEO
(Ta=25˚C)
–55 ~ +150
.
Ratings
–120
–120
–50
–20
250
150
–5
V
V
I
I
I
V
I
V
V
R
C
C
E
C
g
CB
CE
CE
CB
CE
= –10 A, I
= –1mA, I
= –10 A, I
= –20mA, I
= 100k , Function FLAT
= –50V, I
= –5V, I
= –40V, I
= –50V, I
= –5V, I
Unit
mW
mA
mA
Conditions
C
˚C
˚C
E
B
V
V
V
C
E
B
C
E
B
= –2mA
= 2mA, f = 200MHz
= 0
= 0
= 0
= 0
= 0
= –1mA, G
= –2mA
V
= 80dB
1.27
0.45
–120
–120
min
180
–5
2.54 0.15
5.0 0.2
1
+0.2
–0.1
2
3
200
1.27
typ
0.45
+0.2
–0.1
–100
– 0.6
max
520
150
–1
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
4.0 0.2
Unit: mm
MHz
Unit
mV
nA
V
V
V
V
A
1
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2SA921 Summary of contents
Page 1
... Transistor 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Features High collector to emitter voltage V Low noise voltage NV. Absolute Maximum Ratings Parameter Symbol Collector to base voltage V CBO Collector to emitter voltage V CEO Emitter to base voltage V EBO Peak collector current ...
Page 2
... V =–10V CE G =80dB V Function=FLAT 100 R =100k 22k 40 4. – 0.01 – 0.03 – 0.1 – 0.3 – Collector current I C 2SA921 I — –60 V =–5V CE –50 25˚C Ta=75˚C –25˚C –40 –30 –20 – – 0.4 – 0.8 –1.2 –1.6 –2 Base to emitter voltage — ...