2SA838 Panasonic Semiconductor, 2SA838 Datasheet

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2SA838

Manufacturer Part Number
2SA838
Description
Silicon NPN epitaxial planer type(For high-frequency amplification)
Manufacturer
Panasonic Semiconductor
Datasheet
Transistor
2SA838
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC1359
*
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer
capacitance
FE
Features
High transition frequency f
Absolute Maximum Ratings
Electrical Characteristics
Rank
Rank classification
h
FE
Parameter
Parameter
70 ~ 140
B
110 ~ 220
Symbol
V
V
V
I
P
T
T
C
C
T
C
j
stg
CBO
CEO
EBO
.
I
I
I
h
V
V
f
NF
Z
C
CBO
CEO
EBO
T
FE
(Ta=25˚C)
Symbol
rb
CE(sat)
BE
re
*
(Ta=25˚C)
–55 ~ +150
Ratings
–30
–20
–30
250
150
–5
V
V
V
V
I
V
V
V
V
V
f = 10.7MHz
C
CB
CE
EB
CE
CE
CB
CB
CE
CE
= –10mA, I
= –20V, I
= –5V, I
= –10V, I
= –10V, I
= –10V, I
= –10V, I
= –10V, I
= –10V, I
= –10V, I
Unit
mW
mA
Conditions
C
˚C
˚C
V
V
V
B
C
C
C
C
E
B
E
E
= 0
= 0
= 1mA, f = 200MHz
= 1mA, f = 5MHz
= 0
= –1mA
= –1mA
= –1mA, f = 2MHz
= –1mA,
= –1mA
1.27
0.45
min
150
70
2.54 0.15
5.0 0.2
1
+0.2
–0.1
2
3
– 0.1
– 0.7
300
1.27
typ
2.8
1.2
22
0.45
+0.2
–0.1
– 0.1
–100
max
–10
220
4.0
2.0
50
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
4.0 0.2
Unit: mm
MHz
Unit
dB
pF
V
V
A
A
1

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2SA838 Summary of contents

Page 1

... Transistor 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC1359 Features High transition frequency Absolute Maximum Ratings Parameter Symbol Collector to base voltage V CBO Collector to emitter voltage V CEO Emitter to base voltage V EBO Collector current I C Collector power dissipation P C Junction temperature ...

Page 2

... CB PG — =–10V CE f=100MHz Ta=25˚ – 0.1 – 0.3 –1 –3 –10 –30 –100 ( mA ) Collector current I C 2SA838 V — I CE(sat) C –100 –30 –10 –3 –1 Ta=75˚C 25˚C – 0.3 – 0.1 –25˚C – 0.03 – 0.01 – 0.1 – 0.3 –1 – ...

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