MT8VDDT3264HG-26A Micron, MT8VDDT3264HG-26A Datasheet

MT8VDDT3264HG-26A

Manufacturer Part Number

MT8VDDT3264HG-26A

Description

256MB (x64) 200-PIN DDR SDRAM SODIMM

Manufacturer

Micron

Datasheet

1.MT8VDDT3264HG-26A.pdf (25 pages)

Current page: 1 of 25
Download datasheet (630Kb)

‡

SMALL-OUTLINE

DDR SDRAM MODULE

FEATURES

• 200-pin small-outline dual in-line memory module

• Fast data transfer rates PC2100 or PC1600

• Utilizes 200 Mb/s/pin and 266 Mb/s/pin DDR

• 128MB (16 Meg x 64) and 256MB (32 Meg x 64)

• V

• 2.5V I/O (SSTL_2 compatible)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs; center-

• Internal, pipelined double data rate (DDR) architec-

• Bidirectional data strobe (DQS) transmitted/

• Differential clock inputs (CK and CK# - can be

• Four internal device banks for concurrent operation

• Programmable burst lengths: 2, 4, or 8

• Auto precharge option

• Auto Refresh and Self Refresh Modes

• 15.6µs (MT8VDDT1664HG), 7.8125µs

• Serial Presence Detect (SPD) with EEPROM

• Programmable READ CAS latency

• Gold-plated edge contacts

PART NUMBERS AND TIMING PARAMETERS

NOTE: All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for

16, 32 Meg x 64 200-Pin DDR SDRAM SODIMMs

DD8C16_32X64HG_A.p65 – Rev. A; Pub. 11/01

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PUROPOSES ONLY AND ARE SUBJECT TO CHANGE BY

PART NUMBER

MT8VDDT1664HG-26A__

MT8VDDT1664HG-265__

MT8VDDT1664HG-202__

MT8VDDT3264HG-26A__

MT8VDDT3264HG-265__

MT8VDDT3264HG-202__

MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON'S PRODUCTION AND DATA SHEET SPECIFICATIONS.

(SODIMM)

SDRAM components

aligned with data for WRITEs

ture; two data accesses per clock cycle

received with data—i.e., source-synchronous data

capture

multiple clocks, CK0/CK0#, CK1/CK1#, etc.)

(MT8VDDT3264HG) maximum average periodic

refresh interval

DDSPD

current revision codes. Example: MT8VDDT3264HG-265A1

= V

= +2.2V to +5.5V

Q = +2.5V ±0.2V

MARKING

PART

-26A

-265

-202

-265

-202

MODULE

DENSITY

128MB

256MB

CONFIGURATION

16 Meg x 64

32 Meg x 64

MT8VDDT1664HG

MT8VDDT3264HG

For the latest data sheet, please refer to the Micron Web

site:

OPTIONS

• Package

• Frequency/CAS Latency

ADDRESS TABLE

Refresh Count

Row Addressing

Device Bank Addressing

Device Configuration

Column Addressing

Module Bank Addressing

200-PIN DDR SDRAM SODIMMs

200-pin SODIMM (gold)

133 MHz (266 Mb/s/pin/CL = 2)

133 MHz (266 Mb/s/pin/CL = 2.5)

100 MHz (200 Mb/s/pin/CL = 2)

www.micron.com/datasheets

TRANSFER

Micron Technology, Inc., reserves the right to change products or specifications without notice.

2.1 GB/s

1.6 GB/s

2.1 GB/s

1.6 GB/s

RATE

200-Pin SODIMM

CLOCK/DATA RATE

7.5ns/266 Mb/s/pin

10ns/200 Mb/s/pin

128MB, 256MB (x64)

MEMORY BIT

MO-224

4 (BA0, BA1)

4K (A0–A11)

1K (A0–A9)

16 Meg x 8

1 (S0#)

128MB

256MB

(CL -

ADVANCE

LATENCY

MARKING

4 (BA0, BA1)

8K (A0–A12)

1K (A0–A9)

32 Meg x 8

2.5-3-3

RCD -

2-3-3

2-2-2

2-3-3

2-2-2

1 (S0#)

256MB

-26A

-265

-202

RP)

‡

Related parts for MT8VDDT3264HG-26A

Related keywords

MT8VDDT3264HG-26A datasheet
MT8VDDT3264HG-26A data sheet
MT8VDDT3264HG-26A pdf datasheet
MT8VDDT3264HG-26A component
MT8VDDT3264HG-26A part
MT8VDDT3264HG-26A distributor
MT8VDDT3264HG-26A RoHS
MT8VDDT3264HG-26A datasheet download