2SA747 Inchange Semiconductor, 2SA747 Datasheet - Page 2

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2SA747

Manufacturer Part Number
2SA747
Description
POWER TRANSISTOR
Manufacturer
Inchange Semiconductor
Datasheet
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
Switching times
SYMBOL
V
V
V
V
(BR)CEO
(BR)EBO
I
I
h
t
CEsat
BEsat
CBO
EBO
f
stg
t
t
FE
T
r
f
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Rise time
Storage time
Fall time
PARAMETER
I
I
I
I
V
V
I
I
V
I
C
E
C
C
C
C
B1
CB
EB
CC
=-50mA ;I
=-1mA ;I
=-5A; I
=-5A; I
=-3A ; V
=-0.5A ; V
=-200mA,I
=-120V; I
=-6V; I
=-12V;R
2
B
B
=-0.5A
=-0.5A
CONDITIONS
CE
C
C
=0
=0
B
CE
=-4V
L
=0
E
=4Ω;I
B2
=0
=-12V
=50mA
C
=-3A
Product Specification
-120
MIN
30
-6
TYP.
1.2
3.3
0.8
15
2SA747
MAX
-2.0
-2.5
-0.1
-1.0
UNIT
MHz
mA
mA
μs
μs
μs
V
V
V
V

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