2SA715 Hitachi Semiconductor, 2SA715 Datasheet - Page 2

• Manufacturer Part Number: 2SA715
• Description: Silicon PNP Epitaxial
• Manufacturer: Hitachi Semiconductor

2SA715
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation
voltage
Gain bandwidth product
Note:
B
60 to 120
2
0.8
0.6
0.4
0.2
1. The 2SA715 is grouped by h
0
C
100 to 200
Maximum Collector Dissipation
Ambient temperature Ta ( C)
50
Curve
100
D
160 to 320
Symbol
V
V
V
I
h
h
V
V
f
CBO
T
FE
FE
(BR)CBO
(BR)CEO
(BR)EBO
BE
CE(sat)
*
1
150
FE
as follows.
Min
–35
–35
–5
—
60
20
—
—
—
200
Typ
—
—
—
—
—
—
–1.0
–0.5
160
Max
—
—
—
–20
320
—
–1.5
–1.0
—
–1.0
–0.5
–0.2
–0.1
–5
–2
–1
I
C
max(DC Operation)
Collector to emitter voltage V
Unit
V
V
V
V
V
MHz
A
–2
Area of Safe Operation
Test conditions
I
I
I
V
V
V
(Pulse test)
V
(Pulse test)
I
(Pulse test)
V
(Pulse test)
C
C
E
C
–5
CB
CE
CE
CE
CE
(–4 V,–2.5 A)
= –1 mA, I
= –1 mA, I
= –10 mA, R
= –2 A, I
= –35 V, I
= –2 V, I
= –2 V, I
= –2 V, I
= –2 V, I
(–35 V,–0.28 A)
–10
B
T
C
C
C
= –0.2 A
C
C
E
C
E
= –0.5 A
= –1.5 A
= –1.5 A
= –0.2 A
–20
= 0
= 0
= 25 C
BE
= 0
CE
=
(V)
–50