2SA715 Hitachi Semiconductor, 2SA715 Datasheet
2SA715
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2SA715 Summary of contents
Page 1
... Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value 2SA715 Silicon PNP Epitaxial Symbol V CBO V CEO V EBO ...
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... Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Note: 1. The 2SA715 is grouped 120 100 to 200 160 to 320 Maximum Collector Dissipation Curve 0.8 0.6 0.4 ...
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... C) Collector to emitter voltage V 240 V CE 200 160 T 120 –1.2 –1.4 –0.01 –0.02 (V) BE 2SA715 Typical Output Characteristics = 25 C –10 –8 –6 –4 – –1 –2 –3 –4 –5 ( Current Transfer Ratio vs. Collector Current = –2 V ...
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Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm TO-126 Mod — — 0.67 g ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...