MT8JTF12864HY-1G1 Micron, MT8JTF12864HY-1G1 Datasheet - Page 11

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MT8JTF12864HY-1G1

Manufacturer Part Number
MT8JTF12864HY-1G1
Description
1GB DDR3 SDRAM SODIMM
Manufacturer
Micron
Datasheet
I
Table 11: DDR3 I
Values are for the MT41J128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8)
component data sheet
PDF: 09005aef82b36df5
Rev. C 8/09 EN
Parameter
Operating current 0: One bank ACTIVATE-to-PRECHARGE
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE
Precharge power-down current: Slow exit
Precharge power-down current: Fast exit
Precharge quiet standby current
Precharge standby current
Precharge standby ODT current
Active power-down current
Active standby current
Burst read operating current
Burst write operating current
Refresh current
Self refresh temperature current: MAX T
Self refresh temperature current (SRT-enabled): MAX T
All banks interleaved read current
Reset current
DD
Specifications
DD
Specifications and Conditions – 1GB
C
= 85°C
1GB, 2GB (x64, SR) 204-Pin DDR3 SDRAM SODIMM
C
= 95°C
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
I
I
I
I
I
I
I
I
DD2NT
I
DD6ET
DD4W
I
I
DD2Q
DD2N
DD3N
I
I
I
I
DD2P
DD2P
DD3P
DD4R
DD0
DD1
DD5
DD6
DD7
DD8
1600
1120
2000
2000
2080
4800
Electrical Specifications
960
360
536
560
760
360
536
112
96
48
72
©2007 Micron Technology, Inc. All rights reserved.
1333
1040
1600
1760
1920
3920
880
320
480
520
680
320
496
112
96
48
72
1066
1280
1520
1760
3120
800
960
280
424
440
600
280
456
112
96
48
72
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA

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