2SA1858 Panasonic Semiconductor, 2SA1858 Datasheet
2SA1858
Manufacturer Part Number
2SA1858
Description
Silicon PNP epitaxial planer type
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SA1858.pdf
(2 pages)
Transistor
2SA1858
Silicon PNP epitaxial planer type
For general amplification
*
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
FE
Features
High collector to emitter voltage V
Absolute Maximum Ratings
Electrical Characteristics
Rank
Rank classification
h
FE
Parameter
Parameter
30 ~ 100
P
60 ~ 150
Symbol
V
V
V
I
I
P
T
T
CP
C
Q
C
j
stg
CBO
CEO
EBO
V
V
h
V
f
C
T
FE
(Ta=25˚C)
Symbol
CEO
EBO
CE(sat)
ob
*
CEO
(Ta=25˚C)
–55 ~ +150
.
Ratings
–300
–300
–100
–70
150
–5
1
I
I
V
I
V
V
C
E
C
CB
CE
CB
= –100 A, I
= –1 A, I
= –10mA, I
= –10V, I
= –10V, I
= –10V, I
Unit
C
mA
mA
Conditions
˚C
˚C
W
V
V
V
E
= 0
C
B
E
B
= 10mA, f = 200MHz
= 0, f = 1MHz
= –5mA
= –1mA
= 0
1.27
5.0 0.2
1 2 3
2.54 0.15
–300
min
–5
30
50
0.7 0.1
1.27
0.45
+0.15
–0.1
typ
7
0.45
1:Emitter
2:Collector
3:Base
TO–92NL Package
+0.15
–0.1
– 0.6
max
4.0 0.2
150
Unit: mm
MHz
Unit
pF
V
V
V
1
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2SA1858 Summary of contents
Page 1
... Transistor 2SA1858 Silicon PNP epitaxial planer type For general amplification Features High collector to emitter voltage V Absolute Maximum Ratings Parameter Symbol Collector to base voltage V CBO Collector to emitter voltage V CEO Emitter to base voltage V EBO Peak collector current I CP Collector current I C Collector power dissipation ...
Page 2
... Collector current — Ta CEO 10000 V =–120V CE 3000 1000 300 100 120 160 200 240 Ambient temperature Ta ( ˚C ) 2SA1858 I — –120 V =–10V CE 25˚C –100 Ta=75˚C –25˚C –80 –60 –40 – – 0.4 – 0.8 –1.2 –1.6 –2 ...