2SA1310 Panasonic Semiconductor, 2SA1310 Datasheet - Page 2

no-image

2SA1310

Manufacturer Part Number
2SA1310
Description
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
Manufacturer
Panasonic Semiconductor
Datasheet
Transistor
2
–100
– 0.3
– 0.1
– 0.03
– 0.01
500
450
400
350
300
250
200
150
100
–30
–10
50
–3
–1
10
– 0.1
0
9
8
7
6
5
4
3
2
1
0
Collector to base voltage V
–1
0
Ambient temperature Ta ( ˚C )
Collector current I
20
– 0.3
–3
40
V
C
–1
CE(sat)
P
60
ob
C
— V
— Ta
–10
–3
80
25˚C
— I
100
CB
–10
Ta=75˚C
C
C
–25˚C
–30
120
( mA )
I
f=1MHz
Ta=25˚C
E
–30
I
C
=0
CB
140
/I
B
=10
–100
–100
( V )
160
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
600
500
400
300
200
100
120
100
80
60
40
20
– 0.01
Collector to emitter voltage V
– 0.1
0
0
0
0
Collector current I
Collector current I
– 0.3
–2
– 0.03
Ta=75˚C
I
–4
–1
NV — I
h
C
–25˚C
FE
25˚C
— V
R
– 0.1
— I
g
–3
–6
=100k
CE
V
G
Function=FLAT
C
C
CE
V
–10
=80dB
22k
–8
=–10V
C
C
– 0.3
I
B
V
=–200 A
CE
( mA )
( mA )
Ta=25˚C
5k
–30
–10
=–5V
–180 A
–160 A
–140 A
–120 A
–100 A
–80 A
–60 A
–40 A
–20 A
CE
–100
–12
–1
( V )
–120
–100
–80
–60
–40
–20
320
280
240
200
160
120
80
40
0
0
0.1
0
Base to emitter voltage V
0.3
Emitter current I
Ta=75˚C
– 0.4
I
C
1
f
– 0.8
25˚C
T
— V
— I
–25˚C
3
–1.2
BE
E
2SA1310
10
E
V
Ta=25˚C
( mA )
V
–1.6
CB
CE
BE
30
=–5V
=–5V
( V )
–2.0
100

Related parts for 2SA1310