2SA1254 Panasonic Semiconductor, 2SA1254 Datasheet
2SA1254
Manufacturer Part Number
2SA1254
Description
Silicon NPN epitaxial planer type(For high-frequency amplification)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SA1254.pdf
(2 pages)
Transistor
2SA1254
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC2206
*
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector to emitter saturation voltage
Base to emitter voltage
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitance
FE
Features
High transition frequency f
Low collector to emitter saturation voltage V
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Absolute Maximum Ratings
Electrical Characteristics
Rank
Rank classification
h
FE
Parameter
Parameter
70 ~ 140
B
110 ~ 220
Symbol
V
V
V
I
I
P
T
T
CP
C
C
T
C
j
stg
CBO
CEO
EBO
.
I
I
I
h
f
V
V
NF
Z
C
CBO
CEO
EBO
T
FE
(Ta=25˚C)
Symbol
rb
CE(sat)
BE
re
*
(Ta=25˚C)
–55 ~ +150
Ratings
–30
–20
–60
–30
400
150
–5
V
V
V
V
V
I
V
V
V
V
CE(sat)
C
CE
CB
CE
EB
CE
CB
CE
CB
CB
= –10mA, I
= –10V, I
= –20V, I
= –5V, I
= –10V, I
= –10V, I
= –10V, I
= –10V, I
= –10V, I
= –10V, I
.
Unit
mW
mA
mA
Conditions
C
˚C
˚C
C
V
V
V
B
C
C
E
E
B
E
E
= 0
= –1mA, f = 10.7MHz
= 0
= 1mA, f = 200MHz
= 1mA, f = 5MHz
= 1mA, f = 2MHz
= 0
= –1mA
= –1mA
= –1mA
1:Base
2:Collector
3:Emitter
1.5
3
min
150
70
0.55 0.1
0.85
2.5
R0.9
6.9 0.1
1.5 R0.9
2
EIAJ:SC–71
M Type Mold Package
2.5
– 0.1
– 0.7
300
typ
2.8
1.2
22
1
2.5 0.1
– 0.1
–100
max
–10
220
4.0
2.0
50
1.0
0.45 0.05
Unit: mm
MHz
Unit
dB
pF
V
V
A
A
A
1
Related parts for 2SA1254
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Silicon N-Channel Junction FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Switching
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon MOS FETs
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel Junction FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon P-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Impedance Conversion In Low Frequency
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Impedance Conversion In Low Frequency
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Low-Frequency Amplification
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel Junction FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For switching
Manufacturer:
Panasonic Semiconductor
Datasheet:
2SA1254 Summary of contents
Page 1
... Transistor 2SA1254 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2206 Features High transition frequency Low collector to emitter saturation voltage V M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. Absolute Maximum Ratings ...
Page 2
... =–10V CE f=100MHz Ta=25˚ – 0.1 – 0.3 –1 –3 –10 –30 –100 ( mA ) Collector current I C 2SA1254 V — I CE(sat) C –100 –30 –10 –3 –1 Ta=75˚C – 0.3 25˚C – 0.1 –25˚C – 0.03 – 0.01 – 0.1 – 0.3 –1 –3 – ...