2SA0885 Panasonic Semiconductor, 2SA0885 Datasheet

2SA0885

Manufacturer Part Number

2SA0885

Description

Silicon PNP epitaxial planar type

Manufacturer

Panasonic Semiconductor

Datasheet

1.2SA0885.pdf (5 pages)

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Power Transistors

2SA0885

Silicon PNP epitaxial planar type

For low-frequency power amplification

Complementary to 2SC1846

■ Features

■ Absolute Maximum Ratings T

Note) * : With a 100 × 100 × 2 mm Al heat sink

■ Electrical Characteristics T

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: February 2003

• Output of 3 W can be obtained by a complementary pair with

• TO-126B package which requires no insulation plate for installa-

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

(Common base, input open circuited)

2SC1846

tion to the heat sink

2. * : Rank classification

Rank

Parameter

FE1

85 to 170

(2SA885)

Symbol

= 25°C ± 3°C

Symbol

CBO

CEO

EBO

120 to 240

stg

CE(sat)

FE1

CBO

CEO

EBO

CBO

CEO

FE2

= 25°C

−55 to +150

Rating

5.0

−1.5

−45

−35

150

Note) The part number in the parenthesis shows conventional part number.

1.2

−5

−1

= −10 µA, I

= −2 mA, I

= −500 mA, I

SJD00002BED

= −20 V, I

= −5 V, I

= −10 V, I

= −5 V, I

= −10 V, I

= −20 V, I

= −10 V, I

170 to 340

Conditions

Unit

°C

= 0

= −1 A

= 0

= 50 mA, f = 200 MHz

= 0

= −500 mA

= 0, f = 1 MHz

= −50 mA

φ 3.16

±0.1

0.75

±0.1

Min

8.0

4.6

−45

−35

+0.5

–0.1

±0.2

2.3

0.5

Typ

200

±0.2

±0.1

TO-126B-A1 Package

0.5

− 0.1

−100

− 0.5

Max

−10

340

±0.1

1: Emitter

2: Collector

3: Base

Unit: mm

3.2

1.76

MHz

Unit

µA



±0.2

±0.1

Related parts for 2SA0885

2SA0885 Summary of contents

Page 1

... Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1846 ■ Features • Output can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installa- tion to the heat sink ■ Absolute Maximum Ratings T ...

Page 2

... (1)With a 100 × 100 × heat sink (2)Without heat sink 120 160 200 Ambient temperature T (°C) a  CE(sat) C – = –1 T =100˚C C 25˚C –25˚C –0.1 –0.01 – ...

Page 3

... T I CEO =–10V 120 160 Ambient temperature T (°C) a Safe operation area –10 Single pulse T =25˚ – t=10ms t=1s –0.1 –0.01 –0.001 –0.1 –1 –10 –100 Collector-emitter voltage V (V) CE SJD00002BED 2SA0885 3 ...

Page 4

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

Page 5

... This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. ...

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