SLD324ZT Sony Corporation, SLD324ZT Datasheet

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... High-Power Density 2W Laser Diode Description The SLD324ZT is a gain-guided, high-power density laser diode with a built-in TE cooler. A new flat, square package with a low thermal resistance and an in-line pin configuration is employed. Fine tuning of the wavelength is possible by controlling the laser chip temperature. Features • High power Recommended optical power output 2.0W • ...

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... SLD324ZT-3 830 ± 10 Type Wavelength (nm) SLD324ZT-21 798 ± 3 SLD324ZT-24 807 ± 3 SLD324ZT-25 810 ± 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip 2 reaches 1MW/cm ...

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... Tth = 15 C Tth = 0 C Tth = 25 C Tth = –10 C Tth = 30 C 0.5 Imon – Monitor current [mA] Dependence of wavelength Tth – Thermistor temperature [ C] Power dependence of far field pattern (Parallel to junction) Tth = 0.5W O –60 – Angle [degree] SLD324ZT ...

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... Tc: Case temperature 100 – 4 – Termistor chacteristics – Tth – Termistor temperature [ C] TE cooler characteristics 2 Tth = – Temperature difference [ C] SLD324ZT 100 ...

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... Power dependence of spectrum 1.00 0.00 790 Wavelength [nm] 1.00 0.00 790 Wavelength [nm] Tth = 0.8W 1.00 0.00 800 790 Tth = 1.6W 1.00 0.00 800 790 – 5 – SLD324ZT Tth = 1.2W 800 Wavelength [nm] Tth = 2.0W 800 Wavelength [nm] ...

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... Temperature dependence of spectrum (Po = 2W) 1.00 0.00 780 Wavelength [nm] 1.00 0.00 780 Wavelength [nm] Tth = –10 C 1.00 0.00 810 780 Tth = 25 C 1.00 0.00 810 780 – 6 – SLD324ZT Tth = 0 C 810 Wavelength [nm] Tth = 30 C 810 Wavelength [nm] ...

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... Package Outline Unit 0.06 4 – 3.0 0 Reference Plane SONY CODE EIAJ CODE JEDEC CODE M-272 41.0 ± 0.05 Window Glass 5.0 12 – 0.64 2.54 46.0 ± 0.5 23.0 LD CHIP 36.0 ± 0.5 20.5 ± 0.1 Distance between pilot hole and emitting area. M-272 PACKAGE WEIGHT – 7 – SLD324ZT 118 g ...