SLD322XT Sony Corporation, SLD322XT Datasheet

no-image

SLD322XT

Manufacturer Part Number
SLD322XT
Description
0.5W High Power Laser Diode
Manufacturer
Sony Corporation
Datasheet
Warranty
This warranty period shall be 90 days after receipt of the product or
1,000 hours operation time whichever is shorter.
Sony Quality Assurance Department shall analyze any product that
fails during said warranty period, and if the analysis results show
that the product failed due to material or manufacturing defects on
the part of Sony, the product shall be replaced free of charge.
Laser diodes naturally have differing lifetimes which follow a Weibull
distribution.
Special warranties are also available.
Description
Features
• High power
• Low operating current: Iop = 0.75A (Po = 0.5W)
• Flat package with built-in photodiode, TE cooler, and thermistor
Applications
• Solid state laser excitation
• Medical use
• Material processes
• Measurement
Structure
Operating Lifetime
Absolute Maximum Ratings (Tth = 25°C)
• Optical power output
• Reverse voltage
• Operating temperature (Tth)
• Storage temperature
1
2
The SLD322XT is a high power, gain-guided laser diode produced
by MOCVD method
diode has a high brightness output with a doubled optical density
Fine adjustment of the oscillation wavelength is possible by controlling
the temperature using the built-in TE cooler (Peltier element).
Recommended optical power output: Po = 0.5W
AlGaAs quantum well structure laser diode
MTTF 10,000H (effective value) at Po = 0.5W, Tth = 25°C
which can be achived by QW-SCH structure
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
0.5W High Power Laser Diode
MOCVD: Metal Organic Chemical Vapor Deposition
QW-SCH: Quantum Well Separate Confinement Heterostructure
1
. Compared to the SLD300 Series, this laser
Po
V
Topr
Tstg
R
LD
PD
2
–10 to +30
–40 to +85
.
0.55
15
2
– 1 –
°C
°C
W
V
V
SLD322XT
Pin Configuration (Top View)
Equivalent Circuit
No.
1
2
3
4
5
6
7
8
1
2
TE cooler (negative)
Thermistor lead 1
Thermistor lead 2
Laser diode (anode)
Laser diode (cathode)
Photodiode (cathode)
Photodiode (anode)
TE cooler (positive)
T
1
H
3
N
TE Cooler
4
Function
LD
5
P
8
6
E93206B02-PS
PD
7
8

Related parts for SLD322XT

SLD322XT Summary of contents

Page 1

... High Power Laser Diode Description The SLD322XT is a high power, gain-guided laser diode produced 1 by MOCVD method . Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure Fine adjustment of the oscillation wavelength is possible by controlling the temperature using the built-in TE cooler (Peltier element) ...

Page 2

... SLD322XT-3 830 ± 10 Type Wavelength (nm) SLD322XT-21 798 ± 3 SLD322XT-24 807 ± 3 SLD322XT-25 810 ± 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip 2 reaches 1MW/cm ...

Page 3

... Imon – Monitor current [mA] Power dependence of far field pattern (Parallel to junction) Tth = 500mW 400mW 300mW 200mW 100mW O –60 – Angle [degree] (Parallel to junction 500mW O Tth = 25 C Tth = 10 C Tth = –5 C –60 – Angle [degree] SLD322XT 90 90 ...

Page 4

... 100 0 – 4 – SLD322XT Dependence of wavelength Po = 500mW Tth – Thermistor temperature [ C] Thermistor characteristics – Tth – Thermistor temperature [ C] TE cooler characteristics 2 Tth = 100 ...

Page 5

... Power dependence of spectrum 1.0 Tth = 0.2W 0.8 0.6 0.4 0.2 796 798 800 Wavelength [nm] 1.0 Tth = 0.4W 0.8 0.6 0.4 0.2 796 798 800 Wavelength [nm] 1.0 0.8 0.6 0.4 0.2 802 804 1.0 0.8 0.6 0.4 0.2 802 804 – 5 – Tth = 0.3W 796 798 800 802 804 Wavelength [nm] Tth = 0.5W 796 798 800 802 804 Wavelength [nm] SLD322XT ...

Page 6

... Wavelength [nm] 1.0 0.8 0.6 0.4 0.2 785 790 795 800 Wavelength [nm] 1.0 Tth = –10 C 0.8 0.6 0.4 0.2 805 810 815 1.0 Tth = 25 C 0.8 0.6 0.4 0.2 805 810 815 – 6 – Tth = 0 C 785 790 795 800 805 Wavelength [nm] Tth = 30 C 785 790 795 800 805 Wavelength [nm] SLD322XT 810 815 810 815 ...

Page 7

... R1.2 ± 0.3 Reference Plane SONY CODE EIAJ CODE JEDEC CODE M – 273(LO – 10) + 0.05 33.0 ± 0.05 Window Ø5.0 Glass 38.0 ± 0.5 LD Chip 19.0 28.0 ± 0.5 * 16.5 ± 0.1 *Distance between pilot hole and emittng area PACKAGE STRUCTURE M-273(LO-10) PACKAGE WEIGHT – 7 – 8 – Ø0.6 2.54 43g Sony Corporation SLD322XT ...

Related keywords