SLD302V-2 Sony Corporation, SLD302V-2 Datasheet
SLD302V-2
Related parts for SLD302V-2
SLD302V-2 Summary of contents
Page 1
... High Power Laser Diode Description The SLD302V is a gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current Applications • Solid state laser excitation • Medical use ...
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... SLD302V-3 830 ± 10 Type Wavelength (nm) SLD302V-21 798 ± 3 SLD302V-24 807 ± 3 SLD302V-25 810 ± 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 1W. However the optical power density of the laser beam at the diode chip 2 reaches 1mW/cm ...
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... – 0.1 Imon – Monitor current [mA] Power dependence of far field pattern (parallel to junction 180mW 90mW 30mW O –30 –20 – Angle [degree – Case temperature [ C] SLD302V = 0 180mW 40 50 ...
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... Differential efficiency vs. Temperature characteristics 1.5 1.0 0.5 0 – – Case temperature [ – 4 – Power dependence of polarization ratio 50 100 150 200 Po – Optical power output [mW] SLD302V 250 ...
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... Power dependence of wavelength 800 805 Wavelength [nm] 800 805 Wavelength [nm] 800 805 Wavelength [nm 40mW 810 800 120mW 810 800 200mW 810 – 5 – SLD302V 80mW 805 810 Wavelength [nm 160mW 805 810 Wavelength [nm] ...
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... Temperature dependence of wavelength (Po = 180mW) 805 815 Wavelength [nm] 805 815 Wavelength [nm] 805 815 Wavelength [nm –6 C 825 805 825 805 825 – 6 – SLD302V 815 825 Wavelength [nm 815 825 Wavelength [nm] ...
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... Package Outline Unit: mm Optical Distance = 2.55 ± 0.05 SONY CODE EIAJ CODE JEDEC CODE M-248 (LO-11) Reference Slot 1 Photo Diode 0 9.0 – 0.015 7.7 MAX 6.9 MAX Window Glass 3.5 Reference Plane LD Chip 3 – 0.45 PCD 2.54 PACKAGE WEIGHT M-248 – 7 – SLD302V 1.2g ...