SLD301XT Sony Corporation, SLD301XT Datasheet

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SLD301XT

Manufacturer Part Number
SLD301XT
Description
100mW High Power Laser Diode
Manufacturer
Sony Corporation
Datasheet
Warranty
This warranty period shall be 90 days after receipt of the product or
1,000 hours operation time whichever is shorter.
Sony Quality Assurance Department shall analyze any product that
fails during said warranty period, and if the analysis results show
that the product failed due to material or manufacturing defects on
the part of Sony, the product shall be replaced free of charge.
Laser diodes naturally have differing lifetimes which follow a Weibull
distribution.
Special warranties are also available.
Description
Features
• High power
• Low operating current
• Flat Package with built-in photodiode, TE cooler and thermistor
Applications
• Solid state laser excitation
• Medical use
Structure
Operating Lifetime
Absolute Maximum Ratings (Tth = 25°C)
• Optical power output
• Reverse voltage
• Operating temperature (Tth)
• Storage temperature
The SLD301XT allows independent thermal and electric design.
This laser diode has a built-in TE (Thermo Electric) cooler.
Recommended optical power output
AlGaAs double-hetero-type laser diode
MTTF 10,000H (effective value) at Po = 90mW, Tth = 25°C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
100mW High Power Laser Diode
Po
V
Topr
Tstg
R
LD
PD
Po = 90mW
–10 to +50
–40 to +85
100
15
2
– 1 –
mW
°C
°C
V
V
SLD301XT
Pin Configuration (Top View)
Equivalent Circuit
1
No.
1
2
3
4
5
6
7
8
2
T
H
TE cooler (negative)
Thermistor lead 1
Thermistor lead 2
Laser diode (anode)
Laser diode (cathode)
Photodiode (cathode)
Photodiode (anode)
TE cooler (positive)
3
1
N
TE Cooler
4
LD
Function
5
P
6
PD
8
E88059C02-PS
7
8

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SLD301XT Summary of contents

Page 1

... High Power Laser Diode Description The SLD301XT allows independent thermal and electric design. This laser diode has a built-in TE (Thermo Electric) cooler. Features • High power Recommended optical power output • Low operating current • Flat Package with built-in photodiode, TE cooler and thermistor Applications • ...

Page 2

... SLD301XT-3 830 ± 10 Type Wavelength (nm) SLD301XT-21 798 ± 3 SLD301XT-24 807 ± 3 SLD301XT-25 810 ± 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 1W. However the optical power density of the laser beam at the diode chip 2 reaches 1mW/cm ...

Page 3

... Tth = 0 C Tth = 25 C Tth = –10 C Tth = 50 C 0.05 Imon – Monitor current [mA] Power dependence of far field pattern (parallel to junction) Tth = 90mW 60mW 30mW O –30 –20 – Angle [degree Tth – Thermistor temperature [ C] SLD301XT 0 90mW 50 ...

Page 4

... Differential efficiency vs. Temperature characteristics 1.5 1.0 0.5 0 – Tth – Thermistor temperature [ – 4 – Power dependence of polarization ratio 100 Po – Optical power output [mW] SLD301XT Tth = 25 C 120 ...

Page 5

... Power dependence of wavelength 800 805 Wavelength [nm] 800 805 Wavelength [nm] 800 805 Wavelength [nm] Tth = 20mW 810 800 Tth = 60mW 810 800 Tth = 100mW 810 – 5 – SLD301XT Tth = 40mW 805 810 Wavelength [nm] Tth = 80mW 805 810 Wavelength [nm] ...

Page 6

... Temperature dependence of wavelength (Po = 90mW) 805 815 Wavelength [nm] 805 815 Wavelength [nm] 805 815 Wavelength [nm] Tth = –6 C 825 805 Tth = 23 C 825 805 Tth = 45 C 825 – 6 – SLD301XT Tth = 12 C 815 825 Wavelength [nm] Tth = 35 C 815 825 Wavelength [nm] ...

Page 7

... – Tth Tth : Thermistor temperature Tc : Case temperature Thermistor characteristics – Tth – Thermistor temperature [ 100 0 – 7 – SLD301XT TE cooler characteristics 2 Tth = 25 C 2.0A 1.5A 50 100 T – Temperature difference [ ...

Page 8

... R1.2 ± 0.3 Reference Plane SONY CODE EIAJ CODE JEDEC CODE M – 273(LO – 10) 33.0 ± 0.05 Window Ø5.0 Glass 8 – Ø0.6 2.54 38.0 ± 0.5 19.0 LD Chip 28.0 ± 0.5 * 16.5 ± 0.1 *Distance between pilot hole and emittng area PACKAGE STRUCTURE M-273(LO-10) PACKAGE WEIGHT – 8 – SLD301XT 43g Sony Corporation ...

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