3SK322 Hitachi Semiconductor, 3SK322 Datasheet - Page 3

• Manufacturer Part Number: 3SK322
• Description: Silicon N-Channel Dual Gate MOS FET
• Manufacturer: Hitachi Semiconductor

Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown voltage V
Gate 1 to source breakdown
voltage
Gate 2 to source breakdown
voltage
Gate 1 cutoff current
Gate 2 cutoff current
Drain current
Gate 1 to source cutoff voltage
Gate 2 to source cutoff voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Power gain
Noise figure
Noise figure
Note: Marking is “ZW–”
Symbol
V
V
I
I
I
V
V
|y
Ciss
Coss
Crss
PG
NF
PG
NF
NF
G1SS
G2SS
DS(on)
(BR)DSX
(BR)G1SS
(BR) G2SS
G1S(off)
G2S(off)
fs
|
Min
12
±8
±8
—
—
0.5
0
0
16
2.4
0.8
—
22
—
12
—
—
Typ
—
—
—
—
—
—
—
—
20
2.9
1.0
0.023
25
1.0
15
3.2
2.8
Max
—
—
—
±100
±100
10
+1.0
+1.0
—
3.4
1.4
0.04
—
1.8
—
4.5
3.5
Unit
V
V
V
nA
nA
mA
V
V
mS
pF
pF
pF
dB
dB
dB
dB
dB
Test conditions
I
V
I
I
V
V
V
V
V
I
V
I
V
I
V
I
V
I
V
I
V
I
D
G1
G2
D
D
D
D
D
D
D
G2S
G1S
G2S
DS
G2S
DS
DS
DS
DS
DS
DS
DS
= 200 µA , V
= 100 µA
= 100 µA
= 10 mA, f = 1 kHz
= 10 mA, f = 1 MHz
= 10 mA, f = 200 MHz
= 10 mA, f = 900 MHz
= 10 mA, f = 60 MHz
= ±10 µA, V
= ±10 µA, V
= 6 V, V
= 10 V, V
= 10 V, V
= 6 V, V
= 6 V, V
= 6 V, V
= 6 V, V
= 6 V, V
= ±6 V, V
= ±6 V, V
= –3 V
= 3 V
G1S
G2S
G2S
G2S
G2S
G2S
G2S
G1S
G2S
G1S
3SK322
= 0.75V,
= 3V,
= 3V,
= 3V,
= 3V,
= 3V,
G1S
G2S
G1S
= 3V,
= 3V,
= V
= V
= –3 V,
= V
= V
DS
DS
DS
DS
= 0
= 0
= 0
= 0
3