3SK322 Hitachi Semiconductor, 3SK322 Datasheet
3SK322
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3SK322 Summary of contents
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... Silicon N-Channel Dual Gate MOS FET Application UHF / VHF RF amplifier Features Low noise figure 1.0 dB typ 200 MHz Capable of low voltage operation Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline 3SK322 ADE-208-712A (Z) 2nd. Edition Dec. 1998 ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Attention: This device is very sensitive to electro static discharge recommended to adopt appropriate cautions when handling this transistor. ...
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... Ciss 2.4 2.9 3.4 Coss 0.8 1.0 1.4 Crss — 0.023 0. — NF — 1.0 1 — NF — 3.2 4.5 NF — 2.8 3.5 3SK322 Unit Test conditions 200 µ – G1S V = –3 V G2S ±10 µ G2S ±10 µ G1S ± G1S ...
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... Main Characteristics 4 ...
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... S22 ANG. MAG. ANG. 76.9 0.993 –2.2 85.7 0.993 –4.5 78.2 0.991 –6.4 73.5 0.990 –8.5 68.7 0.987 –10.5 63.9 0.985 –12.5 64.3 0.982 –14.4 64.5 0.979 –16.2 60.9 0.975 –18.2 53.5 0.971 – ...
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... Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...