3SK165A Sony Corporation, 3SK165A Datasheet - Page 3

• Manufacturer Part Number: 3SK165A
• Description: GaAs N-channel Dual Gate MES FET
• Manufacturer: Sony Corporation

3.0
2.5
2.0
1.5
1.0
0.5
50
40
30
20
10
0
6
5
4
3
2
1
0
0
–2.0
–2.0
0
(V
(V
(V
–1.8
2
DS
DS
DS
V
V
–1.6
= 5V, f = 800MHz)
= 5V)
= 5V, V
G2S
G1S
4
–1.5
–1.4
– Gate 2 to source voltage [V]
– Gate 1 to source voltage [V]
6
I
D
G2S
– Drain current [mA]
–1.2
NF, Ga vs. I
NF vs. V
8
I
D
= 1.5V, f = 800MHz)
–1.0
vs. V
10
–1.0
–0.8
12
G2S
G1S
Ga
NF
–0.6
14
D
V
16
–0.5
–0.4
G2S
18
–0.2 0 0.2
= 0.5V
1.0V
1.5V
20 22
0
V
= 0V
30
25
20
15
10
5
0
–0.2V
–0.4V
–0.6V
–0.8V
–1.0V
–1.2V
–1.4V
G1S
– 3 –
3.0
2.5
2.0
1.5
1.0
0.5
50
40
30
20
10
30
25
20
15
10
0
5
0
–2.0
0
–2.0
0
–1.8
(V
(V
0.2
DS
DS
NFmin
V
–1.6
V
= 5V)
= 5V, f = 800MHz)
0.4
G1S
G1S
(V
–1.5
DS
–1.4
Ga
0.6
– Gate 1 to source voltage [V]
– Gate 1 to source voltage [V]
= 5V, V
f – Frequency [GHz]
–1.2
0.8
gm vs. V
Ga vs. V
NF, Ga vs. f
–1.0
1.0
G2S
–1.0
–0.8
1.2
= 1.5V, I
G1S
G1S
–0.6
1.4
D
1.6
–0.5
–0.4
V
= 10mA)
G2S
1.8
–0.2 0 0.2
= 1.5V
1.0V
0.5V
2.0
3SK165A
2.2
0
V
= 1.5V
1.0V
0.5V
0V
–0.5V
–1.0V
40
35
30
25
20
15
10
G2S