3SK165A Sony Corporation, 3SK165A Datasheet
3SK165A
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3SK165A Summary of contents
Page 1
... GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. ...
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... Min. Typ. 20 –1 – 0.5 7 G1S ( –2.0 –1.5 –1.0 –0.5 V – Gate 1 to source voltage [V] G1S 3SK165A (Ta = 25°C) Max. Unit 100 µA –20 µA –20 µ –4 V – 1 2 G2S = 1.5V 1.0V ...
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... Ga vs. V G1S ( 800MHz 1.5V G2S –1.8 –1.6 –1.4 –1.2 –1.0 –0.8 –0.6 –0.4 –0.2 0 0.2 V – Gate 1 to source voltage [V] G1S NF 1.5V 10mA) DS G2S D Ga NFmin 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 f – Frequency [GHz] 3SK165A V G2S = 1.5V 1.0V 0.5V 0V –0.5V –1.0V 0 1.0V 0. 2.0 2.2 ...
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... ANG –0.7 –1.6 –2.4 –3.2 –4.2 –4.9 –5.8 –6.7 –7.3 –8.3 –9.0 –9.6 –10.5 –11.2 –12.1 –12.9 –13.9 –14.5 –15.3 –15.9 ...
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... Package Outline Unit 0. 0.1 0.4 – 0.05 ( 0.95 ) SONY CODE EIAJ CODE JEDEC CODE M-254 2.9 ± 0.2 1 0.1 0.6 – 0.05 ( 0.85 ) 1.8 M-254 PACKAGE MASS – 5 – + 0.2 1.1 – 0 0.1 + 0.1 0.10 – 0.01 1. Source 2. Gate1 3. Gate2 4. Drain 0.01g 3SK165A ...