PD55015-PD55015S STMicroelectronics, PD55015-PD55015S Datasheet

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PD55015-PD55015S

Manufacturer Part Number
PD55015-PD55015S
Description
RF POWER TRANSISTORS The LdmoST Plastic FAMILY
Manufacturer
STMicroelectronics
Datasheet
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
DESCRIPTION
The PD55015 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12V in common source mode at frequencies of
up to 1GHz. PD55015 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD55015’s su-
perior linearity performance makes it an ideal so-
lution for car mobile radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
ABSOLUTE MAXIMUM RATINGS(T
THERMAL DATA
May 2000
V
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 15 W with 13.5 dB gain @ 500 MHz /
12.5V
NEW RF PLASTIC PACKAGE
Symbol
R
(BR)DSS
P
T
V
DISS
th(j-c)
STG
I
T
GS
D
j
Drain Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70
Max. Operating Junction Temperature
Storage Temperature
Junction-Case Thermal Resistance
Parameter
CASE
0
C)
= 25
O
C)
The LdmoST Plastic FAMILY
RF POWER TRANSISTORS
PD55015 - PD55015S
ORDER CODE
PD55015
ORDER CODE
PD55015S
PowerSO-10RF
(Formed Lead)
PowerSO-10RF
-65 to 165
(Straight Lead)
Value
165
1.3
40
73
20
5
BRANDING
BRANDING
XPD55015
PRELIMINARY DATA
XPD55015S
0
Unit
C/W
0
0
W
V
V
A
C
C
1/10

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PD55015-PD55015S Summary of contents

Page 1

... COMMON SOURCE CONFIGURATION POUT = 15 W with 13.5 dB gain @ 500 MHz / 12.5V NEW RF PLASTIC PACKAGE DESCRIPTION The PD55015 is a common source N-Channel, en- hancement-mode, lateral Field-Effect RF power transistor designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies 1GHz. PD55015 boasts the excellent gain, linearity and reliability of ST’ ...

Page 2

... PD55015 - PD55015S ELECTRICAL SPECIFICATION(T CASE STATIC Symbol DSS GSS 150 mA GS( 2.5 A DS(ON 2 12.5 V ISS 12.5 V OSS ...

Page 3

... VDS, DRAIN-SOURCE VOLTAGE (V) Gate-Source Volatge vs. Case Temperature 1.04 1. 10V DS 0.96 - Tc, CASE TEMPERATURE ( C) Drain Current vs. Gate Voltage 4 3.5 3 Ciss 2.5 Coss 2 1.5 Crss 1 0 2.5 3 Vgs, GATE-SOURCE VOLTAGE ( 1. .25A = PD55015 - PD55015S V = 10V DS 3.5 4 4.5 5 3/10 ...

Page 4

... PD55015 - PD55015S TYPICAL PERFORMANCE Output Power vs. Input Power 18 480M 500MHz 0.2 0.4 0.6 0.8 1 Pin, INPUT POWER (W) Drain Efficiency vs. Output Power 520MHz Pout, OUTPUT POWER (W) Output Power vs. Bias Current 20 480MHz ...

Page 5

... V =12. Pin=0. 3.5 0 0.2 Drain Efficiency vs. Output Power =12. =150mA PD55015 - PD55015S 500MHz 480MHz Idq=150mA Pin=0. PD55015S 480MHz 520MHz 500MHz V =12. =150mA DQ 0.4 0.6 0.8 1 1.2 Pin, INPUT POWER (W) 500MHz 480MHz 520MHz V =12 ...

Page 6

... PD55015 - PD55015S TYPICAL PERFORMANCE Return Loss vs. Output Power 0 -10 500MHz 520MHz -20 -30 V =12. =150mA DQ - Pout, OUTPUT POWER (W) Drain Efficiency vs. Bias Current 200 400 600 Idq, BIAS CURRENT (mA) Drain Efficency vs. Drain Voltage 70 480MHz 500MHz 60 520MHz ...

Page 7

... C7,C17 1,000pF 100 mil CHIP CAP C5, C10 33pF, 100 mil CHIP CAP L1 56nH, 7 TURN, COILCRAFT N1,N2 TYPE N FLANGE MOUNT CHIP RESISTOR PD55015 - PD55015S CHIP RESISTOR CHIP RESISTOR Z1 0.471” X 0.080” MICROSTRIP Z2 1.082” X 0.080” MICROSTRIP Z3 0.372” ...

Page 8

... PD55015 - PD55015S TEST CIRCUIT TEST CIRCUIT TEST CIRCUIT TEST CIRCUIT PHOTOMASTER 8/10 6.4 inches ...

Page 9

... PowerSO-10RF (Straight Lead) MECHANICAL DATA PowerSO-10RF (Formed Lead) MECHANICAL DATA PD55015 - PD55015S 9/10 ...

Page 10

... PD55015 - PD55015S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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