BLF6G22S-45 NXP Semiconductors, BLF6G22S-45 Datasheet - Page 2

• Manufacturer Part Number: BLF6G22S-45
• Description: Power LDMOS transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF6G22S-45_2
Product data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
Type number
BLF6G22S-45
Symbol
V
V
T
T
Symbol
R
stg
j
DS
GS
th(j-case)
RF power amplifiers for W-CDMA base stations and multicarrier applications in the
2000 MHz to 2200 MHz frequency range
Connected to flange.
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
thermal resistance from junction
to case
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Description
drain
gate
source
Package
Name
-
Rev. 02 — 17 April 2008
Description
ceramic earless flanged package; 2 leads
Conditions
[1]
Conditions
T
P
case
L
= 12.5 W (CW)
= 80 C;
Simplified outline
1
2
BLF6G22S-45
3
Power LDMOS transistor
Graphic symbol
Min
-
-
Typ
1.7
© NXP B.V. 2008. All rights reserved.
0.5
65
www.DataSheet4U.com
2
Max
65
+13
+150
225
sym112
Version
SOT608B
1
3
Unit
K/W
2 of 10
Unit
V
V
C
C