BLF6G22S-45 NXP Semiconductors, BLF6G22S-45 Datasheet
BLF6G22S-45
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BLF6G22S-45 Summary of contents
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... BLF6G22S-45 Power LDMOS transistor Rev. 02 — 17 April 2008 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; ...
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... Limiting values Parameter Conditions drain-source voltage gate-source voltage storage temperature junction temperature Thermal characteristics Parameter thermal resistance from junction to case Rev. 02 — 17 April 2008 BLF6G22S-45 www.DataSheet4U.com Power LDMOS transistor Simplified outline Graphic symbol Min - 0 ...
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... PDPCH performance at V class-AB production test circuit. Symbol P L(AV ACPR 7.1 Ruggedness in class-AB operation The BLF6G22S-45 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 405 mA BLF6G22S-45_2 Product data sheet Characteristics Conditions V GS ...
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... DS Dq 001aah605 60 10 IMD D (%) (dBc (W) L(PEP) = 2170 MHz; Fig 3. Rev. 02 — 17 April 2008 BLF6G22S-45 www.DataSheet4U.com Power LDMOS transistor 001aah604 60 D (%) (W) L 001aah606 IMD3 IMD5 IMD7 ...
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... P (W) L(AV) = 2162.5 MHz; Fig Table 8 for list of components. Rev. 02 — 17 April 2008 BLF6G22S-45 www.DataSheet4U.com Power LDMOS transistor 001aah608 L(AV 405 mA 2162.5 MHz 2167.5 MHz; carrier spacing 5 MHz. 2 2-carrier W-CDMA adjacent power channel ratio as a function of average load power ...
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... Rev. 02 — 17 April 2008 BLF6G22S-45 www.DataSheet4U.com Power LDMOS transistor C16 C15 C10 C14 C11 C12 ...
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... REFERENCES JEDEC JEITA Rev. 02 — 17 April 2008 BLF6G22S-45 www.DataSheet4U.com Power LDMOS transistor 10.24 0.51 9.98 0.403 0.020 0.393 EUROPEAN ISSUE DATE PROJECTION 06-11-27 06-12-06 © NXP B.V. 2008. All rights reserved. ...
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... Revision history Table 10. Revision history Document ID Release date Data sheet status BLF6G22S-45_2 20080417 • Modifications: • BLF6G22-45_BLF6G22S-45_1 20080219 BLF6G22S-45_2 Product data sheet Abbreviations Description 3rd Generation Partnership Project Complementary Cumulative Distribution Function Continuous Waveform Dedicated Physical CHannel InterModulation Distortion Laterally Diffused Metal-Oxide Semiconductor ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 17 April 2008 BLF6G22S-45 www.DataSheet4U.com Power LDMOS transistor © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G22S-45_2 www.DataSheet4U.com All rights reserved. Date of release: 17 April 2008 ...