BF1012 Siemens Semiconductor Group, BF1012 Datasheet - Page 2

• Manufacturer Part Number: BF1012
• Description: Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
• Manufacturer: Siemens Semiconductor Group

Semiconductor Group
Electrical Characteristics at T
Parameter
DC characteristics
Drain-source breakdown voltage
I
Gate 1 source breakdown voltage
± I
Gate 2 source breakdown voltage
± I
Gate 1 source current
V
Gate 2 source leakage current
± V
Drain current
V
Operating current (selfbiased)
V
Gate 2-source pinch-off voltage
V
AC characteristics
Forward transconductance (self biased)
V
Gate 1-input capacitance (self biased)
V
Output capacitance (self biased)
V
Power gain (self biased)
V
Noise figure (self biased)
V
Gain control range (self biased)
V
Semiconductor Group
D
G1S
DS
DS
DS
DS
DS
DS
DS
DS
DS
G1S
G2S
= 300 µA, - V
G2S
= 12 V, V
= 12 V, V
= 12 V, I
= 12 V, V
= 12 V, V
= 12 V, V
= 12 V, V
= 12 V, V
= 12 V, V
= 6 V, V
= 10 mA, V
= 10 mA, V
= 8 V, V
D
G2S
G1S
G2S
G2S
G2S
G2S
G2S
G2S
G2S
= 100 µA
G1S
G1S
G2S
G1S
= 0 V
= 0 , V
= 6 V
= 6 V, f = 1 kHz
= 6 V, f = 1 MHz
= 6 , f = 1 MHz
= 6 , f = 800 MHz
= 6 V, f = 800 MHz
= 6 V, f = 800 MHz
= 4 V, - V
= 0 V, V
= V
= 0 V, V
DS
G2S
DS
= 0
G2S
DS
= 6 V
= 0 V
A
= 0 V
= 25°C, unless otherwise specified.
= 4 V
2
2
Symbol
V
± V
± V
+ I
± I
I
I
V
g
C
C
G
F
DSS
DSO
fs
G
(BR)DS
G2S(p)
800
g1ss
dss
ps
G1SS
G2SS
(BR)G1SS
(BR)G2SS
ps
min.
16
10
40
8
8
-
-
-
-
-
-
-
-
-
Values
typ.
0.9
2.1
0.9
1.4
10
24
22
50
-
-
-
-
-
-
max.
500
2.5
Sep-09-1998
12
16
60
50
-
-
-
-
-
-
-
-
BF 1012
1998-11-01
Unit
V
µA
nA
µA
mA
V
mS
pF
dB