BF1012 Siemens Semiconductor Group, BF1012 Datasheet
BF1012
Manufacturer Part Number
BF1012
Description
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
Manufacturer
Siemens Semiconductor Group
Datasheet
1.BF1012.pdf
(4 pages)
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Semiconductor Group
Silicon N-Channel MOSFET Tetrode
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BF 1012
Maximum Ratings
Parameter
Drain-source voltage
Continuos drain current
Gate 1/gate 2 peak source current
Gate 1 (external biasing)
Total power dissipation, T
Storage temperature
Channel temperature
Thermal Resistance
Channel - soldering point
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
Semiconductor Group
For low noise, high gain controlled
Operating voltage 12V
Integrated stabilized bias network
input stages up to 1GHz
Marking
MYs
Ordering Code
Q62702-F1487 1 = S
S
76 °C
Pin Configuration
1
1
R
Symbol
V
I
± I
+ V
P
T
T
D
stg
ch
DS
tot
thchs
G1/2SM
2 = D
G1SE
3 = G2
4
-55 ...+150
Value
200
150
4 = G1 SOT-143
16
25
10
370
3
3
Sep-09-1998
Package
1
BF 1012
1998-11-01
VPS05178
K/W
Unit
V
mA
V
mW
°C
2
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BF1012 Summary of contents
Page 1
Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 1012 MYs Maximum Ratings Parameter Drain-source voltage ...
Page 2
Electrical Characteristics at T Parameter DC characteristics Drain-source breakdown voltage I = 300 µ G1S Gate 1 source breakdown voltage ± mA G1S G2S Gate 2 ...
Page 3
Total power dissipation P 300 mW 200 150 100 Insertion power gain G2S -10 -15 -20 -25 -30 -35 ...
Page 4
Gate 1 input capacitance 200MHz 3.2 pF 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0.0 1.0 2.0 3.0 Semiconductor Group Semiconductor Group = Output capacitance C g1ss g2s f = 200MHz 3.2 pF ...