MT28F004B5-1 Micron, MT28F004B5-1 Datasheet - Page 24

• Manufacturer Part Number: MT28F004B5-1
• Description: FLASH MEMORY
• Manufacturer: Micron

RECOMMENDED DC WRITE/ERASE CONDITIONS
Commercial Temperature (0ºC £ T
WRITE/ERASE CURRENT DRAIN
Commercial Temperature (0ºC £ T
Notes: 1. WRITE operations are tested at V
4Mb Smart 5 Boot Block Flash Memory
MT28F004B5_3.fm - Rev. 3, Pub. 8/2002
PARAMETER/CONDITION
PARAMETER/CONDITION
V
V
Boot block unlock voltage
V
WORD WRITE CURRENT: V
WORD WRITE CURRENT: V
BYTE WRITE CURRENT: V
BYTE WRITE CURRENT: V
ERASE CURRENT: V
ERASE CURRENT: V
ERASE SUSPEND CURRENT: V
(ERASE suspended)
ERASE SUSPEND CURRENT: V
(ERASE suspended)
PP
PP
CC
WRITE/ERASE lockout voltage
voltage during WRITE/ERASE operation
WRITE/ERASE lockout voltage
2. Absolute WRITE/ERASE protection when V
3. When 5V V
4. Applies to MT28F400B5 only.
5. Applies to MT28F004B5 and MT28F400B5 with BYTE = LOW.
6. Parameter is specified when device is not accessed. Actual current draw will be I
are tested at V
operations.
a READ is executed while the device is in erase suspend mode.
CC
PP
SUPPLY
SUPPLY
CC
CC
PP
and V
CC
CC
PP
SUPPLY
SUPPLY
voltages equal to or less than the previous WRITE.
CC
PP
SUPPLY
SUPPLY
PP
SUPPLY
SUPPLY
are used, V
A
A
£ +70ºC) and Extended Temperature (-40ºC £ T
£ +70ºC) and Extended Temperature (-40ºC £ T
CC
CC
/V
cannot exceed V
PP
voltages equal to or less than the previous ERASE, and READ operations
PP
SMART 5 BOOT BLOCK FLASH MEMORY
£ V
PPLK
24
.
PP
SYMBOL
by more than 500mV during WRITE and ERASE
V
V
V
1
V
PPLK
PPH
LKO
HH
SYMBOL
I
I
I
I
I
CC
I
CC
I
CC
I
CC
PP
PP
PP
PP
MIN
4.5
10
10
11
12
4
5
6
7
2
9
–
A
A
CC
MAX
MAX
£ +85ºC); V
12.6
£ +85ºC); V
200
12
1.5
5.5
25
20
25
20
30
40
10
–
(5V V
CC
) plus read current if
UNITS
UNITS
mA
mA
mA
mA
mA
mA
mA
CC
CC
µA
V
V
V
V
©2002, Micron Technology Inc.
= +5V ±10%
= +5V ±10%
4Mb
NOTES
NOTES
2
3
4
4
5
5
6