MT28F004B5 Micron, MT28F004B5 Datasheet - Page 14

no-image

MT28F004B5

Manufacturer Part Number
MT28F004B5
Description
FLASH MEMORY
Manufacturer
Micron
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT28F004B5
Manufacturer:
AD
Quantity:
216
Part Number:
MT28F004B5VG-6B
Manufacturer:
RENESAS
Quantity:
111
Part Number:
MT28F004B5VG-6BE
Manufacturer:
MT
Quantity:
1 239
Part Number:
MT28F004B5VG-6BE
Manufacturer:
MT
Quantity:
20 000
Part Number:
MT28F004B5VG-6TE
Manufacturer:
MT
Quantity:
2 652
Part Number:
MT28F004B5VG-8B
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
MT28F004B5VG-8BF
Manufacturer:
MT
Quantity:
770
Part Number:
MT28F004B5VG-8BF
Manufacturer:
MT
Quantity:
20 000
Part Number:
MT28F004B5VG-8TE
Manufacturer:
MICRON/美光
Quantity:
20 000
Part Number:
MT28F004B5VG-8TET
Quantity:
1 000
WRITE/ERASE CYCLE ENDURANCE
and fabricated to meet advanced firmware storage re-
quirements. To ensure this level of reliability, V
be at 5V ±10% during WRITE or ERASE cycles. Due to
process technology advances, 5V V
application and production programming. For back-
ward compatibility with SmartVoltage technology, 12V
V
be connected for up to 100 cumulative hours. Opera-
tion outside these limits may reduce the number of
WRITE and ERASE cycles that can be performed on the
device.
POWER USAGE
power-saving features that may be utilized in the array
read mode to conserve power. Deep power-down mode
is enabled by bringing RP# LOW. Current draw (I
this mode is a maximum of 20µA at 5V V
is HIGH, the device will enter standby mode. In this
mode, maximum I
brought HIGH during a WRITE or ERASE, the ISM will
continue to operate, and the device will consume the
respective active power until the WRITE or ERASE is
completed.
4Mb Smart 5 Boot Block Flash Memory
F44_B.p65 – Rev. 7/02
PP
The MT28F004B5 and MT28F400B5 are designed
The MT28F004B5 and MT28F400B5 offer several
is supported for a maximum of 100 cycles and may
CC
current is 130µA at 5V. If CE# is
PP
is optimal for
CC
. When CE#
PP
CC
must
SMART 5 BOOT BLOCK FLASH MEMORY
) in
14
POWER-UP
tions is minimized since two consecutive cycles are
required to execute either operation. However, to reset
the ISM and to provide additional protection while V
is ramping, one of the following conditions must be
met:
and the device will enter the array read mode.
Address
Data
RP#
(5V)
V
The likelihood of unwanted WRITE or ERASE opera-
• RP# must be held LOW until V
• CE# or WE# may be held HIGH and
After a power-up or RESET, the status register is reset,
NOTE:
CC
Power-Up/Reset Timing Diagram
Micron Technology, Inc., reserves the right to change products or specifications without notice.
functional level; or
RP# must be toggled from V
1. V
goes HIGH.
CC
Note 1
must be within the valid operating range before RP#
Figure 2
t
RWH
t
AA
VALID
CC
VALID
-GND-V
CC
©2002, Micron Technology, Inc.
is at valid
UNDEFINED
CC
4Mb
.
CC

Related parts for MT28F004B5