MT18VDDF12872HY-40B Micron, MT18VDDF12872HY-40B Datasheet - Page 25

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MT18VDDF12872HY-40B

Manufacturer Part Number
MT18VDDF12872HY-40B
Description
1GB DDR SDRAM SODIMM
Manufacturer
Micron
Datasheet
Table 19: Serial Presence-Detect Matrix (Continued)
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
pdf: 09005aef80e4880c, source: 09005aef80e487d7
DDAF18C128x72HG.fm - Rev. A 10/04 EN
99-127 Manufacturer-Specific Data (RSVD)
48–61
BYTE
65-71
73-90
95-98
41
42
43
44
45
46
47
62
63
64
72
91
92
93
94
Minimum Active Auto Refresh Time,
Minimum Auto Refresh to Active/Auto Refresh Command
Period,
SDRAM Device Max Cycle Time,
SDRAM Device Max DQS–DQ Skew Time,
SDRAM Device Max Read Data Hold Skew Factor,
Reserved
DIMM Height
Reserved
SPD Revision
Checksum for Bytes 0–62
Manufacturer’s JEDEC ID Code
Manufacturer’s JEDEC ID Code (Continued)
Manufacturing Location
Module Part Number (ASCII)
PCB Identification Code
Identification Code (Continued)
Year of Manufacture in BCD
Week of Manufacture in BCD
Module Serial Number
t
RFC
DESCRIPTION
t
CK
MAX
t
RC
t
DQSQ
t
25
QHS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
ENTRY (VERSION)
1GB (x72, ECC, DR) PC3200
(Continued)
0.4ns (-40B)
0.5ns (-40B)
55ns (-40B)
70ns (-40B)
12ns (-40B)
Release 1.1
MICRON
01–12
-40B
1-9
200-PIN DDR SODIMM
0
MT18VDDF12872H
Variable Data
Variable Data
Variable Data
Variable Data
©2004 Micron Technology, Inc.
01–0C
01-09
D4
37
30
28
50
00
01
00
11
2C
00
00
46

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