MT18LSDF6472G-133 Micron, MT18LSDF6472G-133 Datasheet - Page 24
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MT18LSDF6472G-133
Manufacturer Part Number
MT18LSDF6472G-133
Description
256Mb SDRAM - OBSOLETE
Manufacturer
Micron
Datasheet
1.MT18LSDF6472G-133.pdf
(26 pages)
Table 19:
PDF: 09005aef80a2e32f/Source: 09005aef80d04a5a
SDF18C64x72G.fm - Rev. E 9/05 EN
99-125
42–61
65-71
73-90
95-98
Byte
126
127
41
62
63
64
72
91
92
93
94
Description
Device minimum active/auto refresh time,
Reserved
SPD revision
Checksum For bytes 0–62
Manufacturer’s JEDEC ID code
Manufacturer’s JEDEC ID code (continued)
Manufacturing location
Module part number (ASCII)
PCB identification code
Identification code (continued)
Year of manufacture in BCD
Week of manufacture in BCD
Module serial number
Manufacturer-Specific data (RSVD)
System frequency
SDRAM component and clock detail
Serial Presence-Detect Matrix (Continued)
“1”/”0”: Serial data, “driven to HIGH”/”driven to LOW”; V
Notes: 1. The value of
cation value is 37ns.
t
RAS used for -13E modules is calculated from
t
RC
512MB (x72, ECC, SR): 168-PIN SDRAM RDIMM
24
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
100 MHz (-13E/ -133)
= +3.3V ±0.3V
Entry (Version)
66ns (-13E)
71ns (-133)
MICRON
REV. 2.0
1 - 12
-13E
-133
1 - 9
0
Serial Presence-Detect
t
RC -
©2001 Micron Technology, Inc. All rights reserved.
t
RP. Actual device specifi-
MT18LSDF6472
Variable Data
Variable Data
Variable Data
Variable Data
01 - 0C
01-09
6D
3C
2C
42
00
02
21
00
64
8F
FF