MT16LSDT6464AY-13E Micron, MT16LSDT6464AY-13E Datasheet - Page 23
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MT16LSDT6464AY-13E
Manufacturer Part Number
MT16LSDT6464AY-13E
Description
512MB SDRAM UDIMM
Manufacturer
Micron
Datasheet
1.MT16LSDT6464AY-13E.pdf
(28 pages)
Table 19:
Table 20:
Figure 10:
PDF: 09005aef807b3771/Source: 09005aef807b37b5
SD8_16C32_64x64AG.fm - Rev. D 3/05 EN
Mode
Memory Area Select Code (two arrays)
Protection Register Select Code
Current Address Read
RandomAddressRead
Sequential Read
Byte Write
Page Write
SDA OUT
SDA IN
SCL
EEPROM Device Select Code
The most significant bit (b7) is sent first
EEPROM Operating Modes
SPD EEPROM Timing Diagram
t SU:STA
RW Bit
1
0
1
1
0
0
t F
256MB (x64, SR), 512MB (x64, DR) 168-Pin SDRAM UDIMM
t HD:STA
t LOW
b7
t AA
1
0
V
V
V
V
IH
IH
IH
IH
WC
V
V
Device Type Identifier
or V
or V
or V
or V
IL
IL
IL
IL
IL
IL
t HIGH
b6
t HD:DAT
0
1
Bytes
≤ 16
23
≥ 1
1
1
1
b5
t DH
1
1
Start, Device Select, RW = 1
Start, Device Select, RW= 0, Address
RESTART, Device Select, RW= 1
Similar to Current or Random Address Read
START, Device Select, RW = 0
START, Device Select, RW = 0
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t SU:DAT
b4
0
0
SA2
SA2
b3
Initial Sequence
Chip Enable
Serial Presence-Detect
©2003 Micron Technology, Inc. All rights reserved.
SA1
SA1
b2
t SU:STO
t BUF
UNDEFINED
SA0
SA0
b1
RW
RW
RW
b0