MT16LSDT6464AG-13E Micron, MT16LSDT6464AG-13E Datasheet
MT16LSDT6464AG-13E
Related parts for MT16LSDT6464AG-13E
MT16LSDT6464AG-13E Summary of contents
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... CL - RCD - PART NUMBER MT8LSDT3264AG-13E_ NA MT8LSDT3264AG-133_ MT8LSDT3264AG-10E_ MT16LSDT6464AG-13E_ 512MB MT16LSDT6464AG-133_ Module MT16LSDT6464AG-10E_ 8K 4 (BA0, BA1) NOTE: The designators for component and PCB revision are the 8K (A0–A12) last two characters of each part number Consult 1K (A0–A9) factory for current revision codes. Example: 2 (S0,S2 ...
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... The SPD function is implemented using a 2,048- bit EEPROM. This nonvolatile storage device contains 256 bytes. The first 128 bytes can be programmed by Micron to identify the module type and various SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the cus- tomer ...
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... BA1: SDRAMs U1-U4/U6-U9 SDRAMs U1-U4/U6-U9 2.2 F CK1, CK3 SDRAMs U1-U4/U6-U9 SPD U10 SDA U1-U4/U6-U9 = MT48LC32M8A2TG SDRAMs SA0 SA1 SA2 3 256MB / 512MB (x64) 168-PIN SDRAM DIMMs DQM CS# U2 DQM CS# U4 DQM CS# U6 DQM CS 3.3pF 3.3pF 10pF ADVANCE ©2001, Micron Technology, Inc. ...
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... DQ58 DQ2 DQ2 DQ59 DQ3 DQ3 DQ60 DQ4 DQ4 DQ61 DQ5 DQ5 DQ62 DQ6 DQ6 DQ63 DQ7 DQ7 U1 U2 CK0 U3 U4 U16 U17 CK1 U18 U19 U6 U7 CK2 U8 U9 3.3pF U11 U12 CK3 U13 U14 3.3pF ADVANCE ©2001, Micron Technology, Inc. ...
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... LOAD MODE REGISTER command. WP Input Write Protect: Serial presence-detect hardware write protect. SCL Input Serial Clock for Presence-Detect: SCL is used to synchronize the presence-detect data transfer to and from the module. 5 ADVANCE 256MB / 512MB (x64) 168-PIN SDRAM DIMMs DESCRIPTION ©2001, Micron Technology, Inc. ...
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... V Supply Power Supply: +3.3V ±0.3V Supply Ground – Not Connected: These pins are not connected on this module. 6 ADVANCE 256MB / 512MB (x64) 168-PIN SDRAM DIMMs DESCRIPTION ©2001, Micron Technology, Inc. ...
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... The remaining (least significant) address bit(s) is (are) used to select the starting location within the block. Full-page bursts wrap within the page if the boundary is reached, as shown in the Burst Definition Table (Pg. 8). 7 ADVANCE 256MB / 512MB (x64) 168-PIN SDRAM DIMMs ©2001, Micron Technology, Inc. ...
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... A0-A9 select the starting column. 6. Whenever a boundary of the block is reached within a given sequence above, the following access wraps within the block. 7. For a burst length of one, A0-A9 select the unique column to be accessed, and mode register bit M3 is ignored. ADVANCE 0-1 1-0 0-1-2-3 1-0-3-2 2-3-0-1 3-2-1-0 0-1-2-3-4-5-6-7 1-0-3-2-5-4-7-6 2-3-0-1-6-7-4-5 3-2-1-0-7-6-5-4 4-5-6-7-0-1-2-3 5-4-7-6-1-0-3-2 6-7-4-5-2-3-0-1 7-6-5-4-3-2-1-0 Not supported ©2001, Micron Technology, Inc. ...
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... OUT -10E NOP NOP OUT t AC DON’T CARE UNDEFINED 9 ADVANCE 256MB / 512MB (x64) 168-PIN SDRAM DIMMs CAS Latency Table ALLOWABLE OPERATING FREQUENCY (MHz) CAS CAS LATENCY = 2 LATENCY = 3 133 143 100 133 100 125 ©2001, Micron Technology, Inc. ...
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... – – – – L – – – – ADVANCE ADDR DQs NOTES Bank/Row X 3 Bank/Col X 4 Bank/Col Valid 4 X Active Code Op-code X 2 – Active 8 – High-Z 8 ©2001, Micron Technology, Inc. ...
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... UNITS NOTES -0.3 0 -40 40 µ µA 2.4 – – 0 UNITS NOTES -0.3 0 -80 80 µA I -10 10 µA 2.4 – – 0 ©2001, Micron Technology, Inc ...
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... DD I 5440 5120 4800 mA ‡ ‡ ‡ ©2001, Micron Technology, Inc. 3, 18, 19 12, 19 18, 19 12, 18, 19, 30 18, 19 12, 19 18, 19 12, 18, 19, 30 ...
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... SDRAM DIMMs 256MB SYMBOL MIN MAX 13 2.5 3 – ADVANCE 512MB MIN MAX UNITS 40 60 13 – ©2001, Micron Technology, Inc. ...
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... CLK + 7.5ns 7ns ©2001, Micron Technology, Inc. NOTES ...
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... ©2001, Micron Technology, Inc. ...
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... RP) begins 7ns for -13E; 7.5ns for -133 and t RAS. use in -13E speed grade module 45ns 10ns; for -133 and 7.5ns. ADVANCE t RP; clock( 7.5ns for - undershoot limit is actu- DD ©2001, Micron Technology, Inc. ...
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... SCL SDA DATA STABLE Figure 3 17 256MB / 512MB (x64) 168-PIN SDRAM DIMMs START BIT Figure 2 Definition of Start and Stop 8 9 Acknowledge ©2001, Micron Technology, Inc. ADVANCE STOP BIT ...
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... Start, Device Select Address reSTART, Device Select Similar to Current or Random Address Read START, Device Select START, Device Select SU:DAT t SU:STO MIN 4 4.7 250 4.7 4.7 ADVANCE BUF UNDEFINED MAX UNITS µs µs 1 µs ns µs µs ©2001, Micron Technology, Inc. ...
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... DH 300 300 ns t HD:DAT 0 µs t HD:STA 4 µs t HIGH 4 µ 100 ns t LOW 4.7 µ µs t SCL 100 KHz t SU:DAT 250 ns t SU:STA 4.7 µs t SU:STO 4.7 µs t WRC 10 ms ©2001, Micron Technology, Inc. UNITS µA µA µA mA NOTES 2 ...
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... RP 15 (-13E) 20 (-133/-10E) t RRD 14 (-13E) 15 (-133) 20 (-10E) t RCD 15 (-13E) 20 (-133/-10E) t RAS 45 (-13E) 44 (133) 50 (-10E 256MB / 512MB (x64) 168-PIN SDRAM DIMMs MT8LSDT3264AG MT16LSDT6464AG ...
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... DS 1.5 (-13E/-133) 2 (-10E 0.8 (-13E/-133) 1 (-10E) REV. 1.2 (-13E) (-133) (-10E) MICRON 0 100 MHz (-13E/-133/-10E) 21 ADVANCE 256MB / 512MB (x64) 168-PIN SDRAM DIMMs MT8LSDT3264AG MT16LSDT6464AG ...
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... SDRAM DIMMs 1.131 (28.73) 1.119 (28.42) .700 (17.78) TYP .128 (3.25) (2X) .118 (3.00) .050 (1.27) TYP PIN 84 (PIN 168 ON BACKSIDE) 1.380 (35.05) 1.370 (34.80) .700 (17.78) TYP .128 (3.25) (2X) .118 (3.00) .050 (1.27) TYP TYP PIN 84 (PIN 168 ON BACKSIDE) ADVANCE .125 (3.18) MAX .054 (1.37) .046 (1.17) .125 (3.18) MAX .054 (1.37) .046 (1.17) ©2001, Micron Technology, Inc. ...
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... TYP 4.550 (115.57) BACK VIEW MIN 23 ADVANCE 256MB / 512MB (x64) 168-PIN SDRAM DIMMs 1.131 (28.73) 1.119 (28.42) .700 (17.78) TYP .128 (3.25) (2X) .118 (3.00) .050 (1.27) TYP PIN 84 (PIN 168 ON BACK SIDE) PIN 85 (PIN 1 ON FRONT SIDE) ©2001, Micron Technology, Inc. .157 (4.00) MAX .054 (1.37) .046 (1.17) ...
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... Preliminary: This data sheet contains initial characterization limits that are subject to chage upon full characterization of production devices. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micronsemi.com, Internet: http://www.micronsemi.com, Customer Comment Line: 800-932-4992 Micron is a registered trademark and the Micron logo and M logo are trademarks of Micron Technology, Inc. 32, 64 Meg x 64 SDRAM DIMMs SD8_16C32_64x64AG_B.p65–Rev. B, Pub. 8/01 ...