MT16LD1664AG-6 Micron, MT16LD1664AG-6 Datasheet - Page 25
![no-image](/images/no-image-200.jpg)
MT16LD1664AG-6
Manufacturer Part Number
MT16LD1664AG-6
Description
DRAM, 128MB 16MX64 DRAM MODULE 168PIN DIMM PACKAGE 3.3V EDO UN BUFFERED 50NS27 pages, 508.8 KbOriginal
Manufacturer
Micron
Datasheet
1.MT16LD1664AG-6.pdf
(27 pages)
- Current page: 25 of 27
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SERIAL PRESENCE-DETECT EEPROM
TIMING PARAMETERS
8, 16, 32 Meg x 64 Nonbuffered DRAM DIMMs
DM78.p65 – Rev. 2/99
SYMBOL
t
t
t
t
t
t
AA
BUF
DH
F
HD:DAT
HD:STA
SDA OUT
SDA IN
SCL
t SU:STA
MIN
300
0.3
4.7
0
4
t F
t HD:STA
MAX
300
3.5
t LOW
t AA
UNITS
SPD EEPROM
µs
µs
ns
ns
µs
µs
t HIGH
t HD:DAT
25
t DH
SYMBOL
t
t
t
t
t
t
HIGH
LOW
R
SU:DAT
SU:STA
SU:STO
t R
NONBUFFERED DRAM DIMMs
t SU:DAT
Micron Technology, Inc., reserves the right to change products or specifications without notice.
8, 16, 32 MEG x 64
t SU:STO
t BUF
MIN
250
4.7
4.7
4.7
4
UNDEFINED
©1999, Micron Technology, Inc.
MAX
1
UNITS
µs
µs
µs
ns
µs
µs
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