VG3617161ET-6 Powerchip, VG3617161ET-6 Datasheet - Page 53
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VG3617161ET-6
Manufacturer Part Number
VG3617161ET-6
Description
1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM
Manufacturer
Powerchip
Datasheet
1.VG3617161ET-6.pdf
(68 pages)
VIS
DQ
CS
A11(BS)
A0~A9
CLK
CKE
CAS
WE
A10
DQM
RAS
Interleaved Column Write Cycle (2 of 2)
Document:1G5-0189
Hi-Z
Command
Activate
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Bank A
RAa
RAa
t
CK3
t
t
RCD
RRD
Command
Write
Bank A
DAa0 DAa1 DAa2 DAa3 DBa0 DBa1
CAa
Command
Activate
Bank B
RBa
RBa
Command
Bank B
Write
CBa
Command
DBb0
Bank B
Write
CBb
Rev.2
DBb1
Command
Bank B
Write
DBc0 DBc1
CBc
Command
Bank A
Write
DAb0
CAb
CMOS Synchronous Dynamic RAM
DAb1
Burst Length=4, CAS Latency=3
Command
Bank B
t
DPL
DAd0
Write
CBd
Precharge
Command
Bank A
QAd1
QAd2 QAd3
t
RP
t
Precharge
Command
1,048,576 x 16 - Bit
DPL
Bank B
Page 53
VG3617161ET