BUZ80 STMicroelectronics, BUZ80 Datasheet

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BUZ80

Manufacturer Part Number
BUZ80
Description
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Manufacturer
STMicroelectronics
Datasheet

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APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
November 1996
BUZ80
BUZ80FI
Symbol
TYPICAL R
AVALANCHE RUGGEDNESS TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
LOW INPUT CAPACITANCE
LOW GATE CHARGE
APPLICATION ORIENTED
CHARACTERIZATION
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
CONSUMER AND INDUSTRIAL LIGHTING
DC-AC INVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)
I
V
D M
V
V
V
T
P
DG R
I
I
T
ISO
D S
GS
stg
D
D
tot
TYPE
( )
j
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS(on)
800 V
800 V
V
= 3.3
DSS
Parameter
R
< 4
< 4
DS( on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
3.4 A
2.1 A
= 25
= 100
I
D
o
C
o
C
o
C
POWER MOS TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
TO-220
BUZ80
100
3.4
2.1
0.8
13
1
-65 to 150
2
Value
3
800
800
150
20
BUZ80FI
ISOWATT220
2000
0.32
2.1
1.3
13
40
BUZ80FI
BUZ80
1
W/
Unit
2
o
o
W
V
V
V
A
A
A
V
C
C
3
o
1/10
C

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BUZ80 Summary of contents

Page 1

... Pulse width limited by safe operating area November 1996 POWER MOS TRANSISTOR I D 3 TO-220 INTERNAL SCHEMATIC DIAGRAM BUZ80 = 3 100 C 2 100 0.8 BUZ80 BUZ80FI ISOWATT220 Value Unit BUZ80FI 800 V 800 2 2000 ...

Page 2

... BUZ80/FI THERMAL DATA R Thermal Resistance Junction-case thj-cas e R Thermal Resistance Junction-ambient thj- amb R Thermal Resistance Case-sink t hc- sin k T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive A R (pulse width limited Single Pulse Avalanche Energy ...

Page 3

... Test Conditions di/dt = 100 150 (see test circuit, figure 5) Safe Operating Areas For ISOWATT220 BUZ80/FI Min. Typ. Max. Unit 50 ns 110 ns 170 Min. Typ. Max. Unit ...

Page 4

... BUZ80/FI Thermal Impedeance For TO-220 Derating Curve For TO-220 Output Characteristics 4/10 Thermal Impedance For ISOWATT220 Derating Curve For ISOWATT220 Transfer Characteristics ...

Page 5

... Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature BUZ80/FI 5/10 ...

Page 6

... BUZ80/FI Turn-on Current Slope Cross-over Time Accidental Overload Area 6/10 Turn-off Drain-source Voltage Slope Switching Safe Operating Area Source-drain Diode Forward Characteristics ...

Page 7

... Fig. 1: Unclamped Inductive Load Test Circuits Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time Fig. 2: Unclamped Inductive Waveforms Fig. 4: Gate Charge Test Circuit BUZ80/FI 7/10 ...

Page 8

... BUZ80/FI TO-220 MECHANICAL DATA DIM. MIN. TYP. A 4.40 C 1.23 D 2.40 D1 1.27 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2.4 H2 10.0 L2 16.4 L4 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3. 8/10 mm MAX. MIN. 4.60 0.173 1.32 0.048 2.72 0.094 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5.15 0.194 2.7 0.094 10.40 0.393 14.0 0.511 2.95 0.104 15.75 0.600 6.6 0.244 3.93 0.137 3.85 0.147 L2 Dia inch TYP. MAX. 0.181 ...

Page 9

... MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.015 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 0.094 10.4 0.393 30.6 1.126 10.6 0.385 16.4 0.626 9.3 0.354 3.2 0.118 BUZ80/FI inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 0.630 1.204 0.417 0.645 0.366 0.126 P011G 9/10 ...

Page 10

... BUZ80/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequ ences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...

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