BUZ70 Siemens Semiconductor Group, BUZ70 Datasheet - Page 5

• Manufacturer Part Number: BUZ70
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
• Manufacturer: Siemens Semiconductor Group

Power dissipation
P
P
Safe operating area
I
parameter: D = 0.01 , T
Semiconductor Group
D
tot
I
tot
D
= ( V
= ( T
10
10
10
10
45
35
30
25
20
15
10
W
A
-1
5
0
2
1
0
10
DS
0
C
0
)
)
20
40
60
10
C
1
= 25°C
80
DC
100
t
p = 2.0µs
V
10 µs
100 µs
1 ms
10 ms
120
10
2
T
V
°C
C
DS
160
5
Drain current
I
parameter: V
Transient thermal impedance
Z
parameter: D = t
Z
D
thJC
I
th JC
D
= ( T
K/W
10
10
10
10
10
= ( t
13
11
10
A
-1
-2
-3
9
8
7
6
5
4
3
2
1
0
1
0
C
10
0
)
-7
p
)
20
GS
10
single pulse
-6
p
40
10 V
/ T
10
-5
60
10
-4
80
10
100
-3
10
120
-2
D = 0.50
07/96
BUZ 70
10
T
t
°C
0.20
0.10
0.05
0.02
0.01
p
C
-1
s
160
10
0