BUZ70 Siemens Semiconductor Group, BUZ70 Datasheet
BUZ70
Available stocks
Related parts for BUZ70
BUZ70 Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated V Type DS BUZ Maximum Ratings Parameter Continuous drain current °C C Pulsed drain current °C C Avalanche current,limited ...
Page 2
Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA Gate threshold voltage DS, D Zero gate voltage drain current ...
Page 3
Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
Page 4
Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
Page 5
Power dissipation tot tot Safe operating area parameter 0.01 ...
Page 6
Typ. output characteristics parameter µ 40W tot ...
Page 7
Drain-source on-resistance (on) j parameter 7 0.38 0. (on) 0.28 0.24 0.20 98% 0.16 typ 0.12 0.08 0.04 0.00 -60 - ...
Page 8
Avalanche energy parameter 48.6 µH GS 6.5 mJ 5.5 E 5.0 AS 4.5 4.0 3.5 3.0 2.5 2.0 1.5 ...
Page 9
Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 BUZ 70 07/96 ...