BUZ345 Siemens Semiconductor Group, BUZ345 Datasheet - Page 8

• Manufacturer Part Number: BUZ345
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
• Manufacturer: Siemens Semiconductor Group

Avalanche energy E
parameter: I
R
Drain-source breakdown voltage
V
V
Semiconductor Group
(BR)DSS
E
(BR)DSS
GS
AS
= 25 , L = 249.9 µH
300
260
240
220
200
180
160
140
120
100
120
116
114
112
110
108
106
104
102
100
mJ
80
60
40
20
98
96
94
92
90
V
0
-60
20
= ( T
D
40
= 41 A, V
-20
j
)
60
20
AS
DD
80
= ( T
= 25 V
60
100
j
)
120
100
°C
T
T
°C
j
j
160
160
8
Typ. gate charge
V
parameter: I
V
GS
GS
= ( Q
16
12
10
V
8
6
4
2
0
0
Gate
D puls
20
)
= 62 A
40
0,2
V
DS max
60
80
0,8
BUZ 345
100
07/96
V
DS max
Q
nC
Gate
130