BUZ345 Siemens Semiconductor Group, BUZ345 Datasheet

BUZ345

Manufacturer Part Number

BUZ345

Description

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Manufacturer

Siemens Semiconductor Group

Datasheet

1.BUZ345.pdf (9 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BUZ345

Manufacturer:

INF

Quantity:

140

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BUZ345

Manufacturer:

Quantity:

5 510

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SIPMOS

Semiconductor Group

• N channel

• Enhancement mode

• Avalanche-rated

Type

BUZ 345

Maximum Ratings

Parameter

Continuous drain current

Pulsed drain current

Avalanche current,limited by T

Avalanche energy,periodic limited by T

Avalanche energy, single pulse

L = 249.9 µH, T

Gate source voltage

Power dissipation

Operating temperature

Storage temperature

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

= 41 A, V

= 28 °C

= 25 °C

Power Transistor

= 25 V, R

100 V

= 25 °C

41 A

= 25

jmax

0.045

DS(on)

jmax

Symbol

Dpuls

stg

tot

thJC

thJA

Package

TO-218 AA

Pin 1

-55 ... + 150

55 / 150 / 56

Values

164

280

150

Ordering Code

C67078-S3121-A2

0.83

Pin 2

BUZ 345

07/96

Unit

°C

K/W

Pin 3

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