BUZ323 Siemens Semiconductor Group, BUZ323 Datasheet - Page 8

• Manufacturer Part Number: BUZ323
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
• Manufacturer: Siemens Semiconductor Group

Avalanche energy E
parameter: I
R
Drain-source breakdown voltage
V
V
Semiconductor Group
(BR)DSS
E
(BR)DSS
GS
AS
= 25 , L = 6.14 mH
800
600
500
400
300
200
100
480
460
450
440
430
420
410
400
390
380
370
360
mJ
V
0
-60
20
= ( T
D
40
= 15 A, V
-20
j
)
60
20
AS
DD
80
= ( T
= 50 V
60
100
j
)
120
100
°C
T
T
°C
j
j
160
160
8
Typ. gate charge
V
parameter: I
V
GS
GS
= ( Q
16
12
10
V
8
6
4
2
0
0
Gate
20
D puls
)
40
= 22 A
0,2
60
V
DS max
80
100
120
BUZ 323
0,8
07/96
140 nC 170
V
Q
DS max
Gate