BUZ323 Siemens Semiconductor Group, BUZ323 Datasheet
BUZ323
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BUZ323 Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated V Type DS BUZ 323 400 V Maximum Ratings Parameter Continuous drain current °C C Pulsed drain current °C C Avalanche current,limited ...
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Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA Gate threshold voltage DS, D Zero gate voltage drain current ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
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Power dissipation tot C 180 W P tot 140 120 100 Safe operating area parameter 0.01 ...
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Typ. output characteristics parameter µ 170W tot ...
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Drain-source on-resistance (on) j parameter 9 1.3 1 (on) 1.0 0.9 0.8 0.7 0.6 0.5 98% typ 0.4 0.3 0.2 0.1 0.0 -60 ...
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Avalanche energy parameter 6. 800 600 500 400 300 200 100 ...
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Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 BUZ 323 07/96 ...