BUZ305 Siemens Semiconductor Group, BUZ305 Datasheet - Page 8

• Manufacturer Part Number: BUZ305
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
• Manufacturer: Siemens Semiconductor Group

Avalanche energy E
parameter: I
R
Drain-source breakdown voltage
V
V
Semiconductor Group
(BR)DSS
E
(BR)DSS
GS
AS
= 25 , L = 27.7 mH
900
700
600
500
400
300
200
100
960
920
900
880
860
840
820
800
780
760
740
720
mJ
V
0
-60
20
= ( T
D
40
= 7.5 A, V
-20
j
)
60
20
AS
80
DD
= ( T
= 50 V
60
100
j
)
120
100
°C
T
T
°C
j
j
160
160
8
Typ. gate charge
V
parameter: I
V
GS
GS
= ( Q
16
12
10
V
8
6
4
2
0
0
Gate
D puls
40
)
= 11 A
0,2
80
V
DS max
120
160
BUZ 305
200
0,8
01/97
V
Q
DS max
nC
Gate
260